Journal of Vacuum Science & Technology B

SUNY Polytechnic Institute Interim Vice President of Research and Empire Innovation Professor of Nanobioscience Dr. Nathaniel Cady; Professor Emeritus and Empire Innovation Professor of Nanoscale Science Dr. Alain Diebold; with Post-Doc Dr. Maximilian Liehr; and alumni Jubin Hazra and Karsten Beckmann, who is also a SUNY Poly adjunct faculty member, published, “Implementation of high-performance and high-yield nanoscale hafnium zirconium oxide based ferroelectric tunnel junction devices on 300 mm wafer platform,” in Journal of Vacuum Science & Technology B.

Researchers from Thermo Fisher Scientific; TEL Technology Center, America, LLC; and the Rochester Institute of Technology collaborated as part of the effort.

The research focuses on hafnium zirconium oxide (HZO)-based 100 × 100 nm² ferroelectric tunnel junction (FTJ) devices, which were “implemented on a 300 mm wafer platform (the platform upon which computer chips are built), using a baseline 65 nm CMOS process technology,” according to the research paper. The article summarizes the findings by indicating that “The realization of CMOS-compatible nanoscale FTJ devices on 300 mm wafer platform demonstrates the promising potential of high-volume large-scale industrial implementation of FTJ devices for various nonvolatile memory applications.”

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The abstract of the published article was also presented in AVS’ recent newsletter: Beneath the AVS Surface.