Dr. Iulian Gherasoiu has joined SUNY Polytechnic Institute in 2014, as assistant professor in the College of Engineering, Electrical Engineering Technology where he is teaching courses in the areas of nanotechnology and of the efficient energy conversion.  Dr. Gherasoiu is also mentoring and supervising the research activity of undergraduate and graduate students.

Education

• Ph.D., Electrical Engineering, Texas Tech University, TX. 2004
• M.S., Industrial Engineering, Texas Tech University, TX. 2000
• M.S., Electrical Engineering, “Politehnica” University, Bucharest, Romania, 1987

Professional Appointments and Past Research

Dr. Gherasoiu started his career in the field of renewable energies after graduating from “Politehnica” University in Bucharest, Romania in 1987 with M.S. in Electrical Engineering. Following graduation, Dr. Gherasoiu has joined the Photovoltaic Group of the National Research Institute for Electrical Engineering in Bucharest, Romania where he has been active in various research and management positions.

At Texas Tech University Dr. Gherasoiu’s research was concerned with the study of molecular beam epitaxy of III-Nitride semiconductors on Silicon using metal-organic sources (MOMBE) and the development of high-brightness light-emitting diodes (HB-LEDs) using metal-organic chemical vapor deposition (MOCVD) of III-Nitride semiconductor materials.

After receiving his Ph.D. in Electrical Engineering from Texas Tech University, Dr. Gherasoiu began working with the Molecular Beam Epitaxy (MBE) Division of Veeco Instruments where he has developed AlGaN/GaN high electron mobility transistors (HEMT) on silicon, and MBE equipment for plasma assisted and ammonia growth of Nitride semiconductors.

In 2008 Dr. Gherasoiu joined Rosestreet Labs Energy in Phoenix, AZ, a startup company originating at Lawrence Berkeley National Laboratory. Here, together with his colleagues at Berkeley National Laboratory, he has spent a few years developing full spectrum solar cells and other optoelectronic devices based on InGaN-on-Silicon semiconductors and has been the principal investigator for two DARPA grants that have received a combined of $900,000 in federal and private funds. At Rosestreet Labs Dr. Gherasoiu has demonstrated the first operating tandem solar cell GaN/Silicon and has developed nano-structured, long-wave light emitting diodes (LED) on silicon using plasma-assisted MBE epitaxial growth.

From 2011 to 2013 Dr. Iulian Gherasoiu has worked with Sumika Electronic Materials and Element Blue Technology in Phoenix, AZ where he has developed MOCVD fabrication processes for InGaP/InGaAs/Ge, multi-junction solar cells, GaAs/InGaAs pseudomorphic HEMTs and InAlGaP alloys for vertical cavity surface emitting laser (VCSEL) diodes.

LinkedIn Profile

Current Areas of Research

• Novel III-Nitride wide bandgap materials, epitaxial growth and electronic properties modeling
• Photoelectrochemical cells for hydrogen generation through spontaneous water dissociation
• Nanostructured solar cells and optoelectronic devices for energy efficient applications
• Metal-oxide and carbon based semiconductors
• Sensors, flexible and transparent electronics

Summary of Professional Appointments

2014-present
Assistant Professor, College of Engineering, SUNY Polytechnic Institute

2013-2014
Manager, Element Blue Technology, LLC., Gilbert, AZ

2011-2013
Sr. Development Engineer, Sumika Electronic Materials, Inc., Phoenix, AZ

2008-2011
Sr. Research Engineer, RoseStreet Labs Energy, Inc., Phoenix, AZ

2005-2008
Development Engineer, Veeco Instruments Inc, St. Paul, MN

2004-2005
Research Scientist, Texas Tech University, Lubbock, TX

1994-1997
Manager, Hybrid Circuits Group, National Research Institute for Electrical Engineering, Bucharest, Romania

1987-1994
Application Engineer, Photovoltaic Applications Group, New Energy Sources Division, National Research Institute for Electrical Engineering, Bucharest, Romania

Other Collaborators
Dr. Harry Efstathiadis, (College of Nanoscale Science and Engineering, SUNY Poly), Dr. Kin Man Yu (Physics Department, Hong Kong City University),  Dr. Wladek Walukiewicz, (Lawrence Berkeley National Laboratory), Dr. Sergey Nikishin, (ECE, Texas Tech Univ.), Dr. Huseyin Ekinci, (Physics and Astronomy Department, University of Waterloo, CA), Dr. Sergey Yu. Karpov, (STR Group, Soft-Impact, Ltd).

Selected Recent Publications

1. Synthesis of New Quaternary Alloys with Magnesium by Plasma-Assisted Molecular Beam epitaxy, I. Gherasoiu, K.M. Yu, M. Hawkridge, W. Walukiewicz, 13th International Conference on Nitride Semiconductors, Seattle, WA, 2019.
2. Mg induced compositional change in InGaN alloys, Gherasoiu, K.M. Yu, M. Hawkridge, L.A. Reichertz, W. Walukiewicz, Semiconductor Science and Technology Dec. 19th, (2018), http://iopscience.iop.org/article/10.1088/1361-6641/aaf9ed.
3. Carbon Films for Corrosion Resistant Photoelectrochemical Cells, Schneider, M. Altwerger, I. Gherasoiu, H. Efstathiadis, Proceedings of 2018 IEEE Nanotechnology Symposium (ANTS), (2018).
4. Mechanism of carrier transport in hybrid GaN/AlN/Si solar cells, Ekinci, V. V. Kuryatkov, I. Gherasoiu, S. Y. Karpov, S. A. Nikishin, Journal of Electronic Materials, 10, 46, (2017) 6078-6083.
5. InGaN pn-junctions grown by PA-MBE: Material characterization and fabrication of nanocolumn electroluminescent devices, Gherasoiu, K.M. Yu, L.A. Reichertz, W. Walukiewicz, “Journal of Crystal Growth 425 (2015) 393–397.
6. Highly Doped n- and p-InGaN Using Plasma-Assisted Molecular Beam Epitaxy, Gherasoiu, K.M. Yu, L.A. Reichertz, W. Walukiewicz, Phys. Status Solidi C, Volume 11,Issue 3-4, pages 381–384, April 2014.
7. Photovoltaic action from InxGa1-xN p-n junctions with x > 0.2 grown on silicon, Gherasoiu, L. A. Reichertz, K. M. Yu, J. W. Ager III, V. M. Kao, and W. Walukiewicz, Phys. Status Solidi C, Article published online: 15 JUN 2011, DOI: 10.1002/pssc.201001169
8. Determination of effective mass in InN by high-field oscillatory magnetoabsorption spectroscopy, Millot, N. Ubrig, J.M. Poumirol, I. Gherasoiu, W. Walukiewicz, S. George, O. Portugall, J. Leotin, M. Goiran, and J.M. Broto, Phys. Rev. B 83, 125204 (2011).
9. High quality InxGa1–xN thin films with x > 0.2 grown on silicon, Gherasoiu, K. M. Yu, L. A. Reichertz, V. M. Kao, M. Hawkridge, J. W. Ager III, and W. Walukiewicz, Phys. Status Solidi B, 1–3, 2010, DOI 10.1002/pssb. 200983462
10. Electron cyclotron effective mass in indium nitride, Goiran, M. Millot, J.-M. Poumirol, I. Gherasoiu, W. Walukiewicz, and J. Leotin, , Appl. Phys. Lett. 96, 052117 (2010).
11. Demonstration of a III-nitride/silicon Tandem Solar Cell, A. Reichertz, I. Gherasoiu, K. M. Yu, V. M. Kao, W. Walukiewicz, and J. W. Ager, Appl. Phys. Express 2 (2009) 122202.
12. Influence of phonons on the temperature dependence of photoluminescence in InN with low carrier concentration, E. Holtz, I. Gherasoiu, V. Kuryatkov, S. A. Nikishin, A. A. Bernussi, and M. W. Holtz , J. Appl. Phys. 105, 063702 (2009).
13. Effect of stress and free-carrier concentration on photoluminescence in InN, D.Y. Song, M.E. Holtz, A. Chandolu, A. Bernussi, S.A. Nikishin, M.W. Holtz, I. Gherasoiu, “Applied Physics Letters 92, 121913 (2008).
14. Characterization of high-quality InN grown on production-style plasma assisted molecular beam epitaxy system, Gherasoiu, M. O’Steen, T. Bird, D. Gotthold, S. X. Xu, A. Cumar, D.Y. Song, M. Holtz, S.A. Nikishin, W. J. Schaff, Journal of Vacuum Science and Technology A, 26(3) May/June (2008).

Patents

• Device for Controlled Charging and Discharging of Lead-Acid Batteries, Ene, I. Gherasoiu, M. Predescu. Romanian Patent No: 114849 B, Published: July 1999.
• Multi-Color Light Emitting Devices with Compositionally Graded Cladding Group III-Nitride Layers Grown on Substrates, W. Walukiewicz, I. Gherasoiu, L. Reichertz, US 9,312,430 B2, April 12, 2016.
• Photovoltaic Device with Three Dimensional Charge Separation and Collection, W. Walukiewicz, L. Reichertz, I. Gherasoiu, US 9,660,126 B2, May 23, 2017.
• Tandem Photoelectrochemical Cell for Water Dissociation, W. Walukiewicz, I. Gherasoiu. USPTO Patent Application: US 2011/0005590 A1, January 13th 2011.