Areas of Research
- Si-based optoelectronic, photonic, photovoltaic and magnetic materials and devices
- Ion beam synthesis, modification and characterization of nanostructures and novel materials
Description of Research
Huang’s research combines ion beam techniques with optical, electrical and magnetic means to tackle the fundamental issues arising from the development of advanced materials and nanodevices for applications in energy harnessing, nanophotonics, and quantum information processing.
Silicon-based optoelectronic, photonic and magnetic materials/devices
A particular focus is on the development of Si-based light emitting devices using standard Si CMOS technologies (e.g., ion implantation). We are researching several approaches to light emission from Si materials, such as the use of erbium doped systems and engineering of Si surface/interface structures. In addition, we have developed an ion implantation method to form silver nanostructures within a Si crystal. The presence of Ag nanostructures can modify the refractive index of Si by 3-10%, and dramatically enhance optical absorption at photon energy close to the Si band gap by one to two orders of magnitude, as a result of surface plasmon excitation of embedded Ag nanostructures in Si. This would enable us to exploit the plasmonic properties of embedded metal nanostructures to tailor optical absorption & emission, electrical/optical signal conversion & transmission, and optical nonlinearity in Si.
Another research direction explores the use of ions beams to create magnetism within Si crystals for emerging quantum devices based on the transport and manipulation of electron spins. Using the ion beam method, we have successfully synthesized magnetic nickel nanostructures within Si without compromising its crystal quality. These embedded nickel nanostructures exhibit strong ferromagnetism even at room temperature with a very high magnetic switching energy barrier of ~ 0.86 eV, an increase by about one order of magnitude as compared to their counterparts on a Si surface or in a highly defective Si environment. Currently, magnetic field modulated transport properties (e.g., magnetoresistance) are being measured to evaluate the possibility for generating spin polarized electrons in Si through such embedded magnetic nanostructures.
Ion beam synthesis, modification and characterization of nanostructures and novel materials
As Director of the Ion Beam Laboratory at State University of New York (SUNY), Huang also leads other research efforts in ion beam synthesis, modification and characterization of nanostructures and novel materials. An example is our innovative method based on hydrogen ion implantation to create thermally robust planar optical waveguides in single-crystal sapphire wafers or optical cladding in single-crystal sapphire fibers for optical sensing applications under high-temperature (>1000 °C) conditions. This will open up opportunities for deploying single-crystal optical fibers in harsh-condition (extremely high temperature, pressure, corrosion and radiation) sensing applications.
Other research activities include ion channeling study of dopant-defect interactions in ZnO crystals with the aim of realizing p-type doping via ion implantation in this wide band gap semiconductor, subnanometer-resolution depth profiling of dopants and point defects in Si ultra-shallow junctions, ion implantation induced surface texturing for light trapping in Si, ion implantation created optical centers in diamond crystals for single photon emission, ion irradiation effects on nanomaterials for developing nuclear reactor materials as well as on biological systems for molecular understanding of radiation damage in DNAs.
We welcome any opportunities for collaborating with different research groups at universities and government research centers/laboratories. The Ion Beam Laboratory at SUNY is also committed to assisting in industrial research & development work by providing companies with the needed facility time or the use of facility on their behalf.
Mengbing Huang and William Spratt, “Optical barriers, waveguides, and methods for fabricating barriers and waveguides for use in harsh environments”, United State Patent 8,852,695.
Perveen Akhter, Mengbing Huang, Nirag Kadakia, William Spratt, Girish Malladi and Hassarum Bakhru, “Suppressing light reflection from polycrystalline silicon thin films through surface texturing and silver nanostructures”, Journal of Applied Physics 116, 113503 (2014).
Girish Malladi, Mengbing Huang, Thomas Murray, Steven Novak, Akitomo Matsubayashi, Vincent LaBella, Hassaram Bakhru, “Synthesis and properties of ferromagnetic nanostructures embedded within a high-quality crystalline silicon matrix via ion implantation and nanocavity assisted gettering processes”, Journal of Applied Physics 116, 054306 (2014).
V. Nikas, S. Gallis, M. Huang, A.E. Kaloyeros, A.P.D. Nguyen, A. Stesmans, V.V. Afanas'ev, “The origin of white luminescence from silicon oxycarbide thin films”, Applied Physics Letters 104, 061906 (2014).
William Spratt, Mengbing Huang, Thomas Murray and Hua Xia, “Optical mode confinement and selection in single-crystal sapphire fibers by formation of nanometer scale cavities with hydrogen ion implantation”, Journal of Applied Physics 114, 203501 (2013).
Sebastian Naczasa, Faisal Yaqoobb and Mengbing Huang, “Effects of surface oxide layer on nanocavity formation and silver gettering in hydrogen ion implanted silicon”, Journal of Applied Physics 114, 023502 (2013).
Lakshmanan H. Vanamurthy, Mengbing Huang, Hassaram Bakhru, Toshiharu Furukawa, Nathaniel Berliner, Joshua Herman, Zhengmao Zhu, Paul Ronsheim, Bruce Doris, “Sub-nanometer-resolution depth profiling of boron atoms and lattice defects in silicon ultra-shallow junctions by ion beam techniques”, Journal of Vacuum Science & Technology A 31, 031403 (2013) .
Y. Deshko, Mengbing Huang and A. A. Gorokhovsky, “Conversion efficiency of implanted ions by confocal micro-luminescence mapping”, Journal of Luminescence 133, 61 (2013).
Fengyuan Lu, Maik Lang, Mengbing Huang, Fereydoon Namavar, Christina Trautmann, Rodney Ewing, Jie Lian, “ZrSi formation at ZrN/Si interface induced by ballistic and ionizing radiations”, Nuclear Instruments & Methods in Physics Research B 286, 266 (2012).
Fengyuan Lu, Mengbing Huang, Faisal Yaqoob, Maik Lang, Fereydoon Namavar, Christina Trautmann, Hongtao Sun, Rodney Ewing and Jie Lian, “Displacive radiation-induced structural contraction in nanocrystalline ZrN”, Applied Physics Letters 101, 041904 (2012).
Himani S. Kamineni, Vimal K. Kamineni, Richard L. Moore, Spyros Gallis, Alain C. Diebold, Mengbing Huang, and Alain E. Kaloyeros, “Optical and structural characterization of thermal oxidation effects of erbium thin films deposited by electron beam on silicon”, Journal of Applied Physics 111, 013104 (2012).