Advances in Engineering: SUNY Poly Researchers Advance Bipolar
Junction Transistors in Two-Dimensional WSe2 with Large Current and
Photocurrent Gains
Published:
Thursday, December 8, 2016 - 16:06
Advances in Engineering
Most semiconductor devices rely on the p-n junction which is achieved by doping. Doping is a critical process that enables a semiconductor to be either electron-conducting (n-type) or hole-conducting (p-type). Doping, however, has been difficult to achieve in nanostructured semiconductors, dating back to the discovery of carbon nanotubes.
Researchers led by Professor Ji Ung Lee at SUNY Polytechnic Institute’s Colleges of Nanoscale Science and Engineering in New York published an article in the journal Nano Letters, which demonstrates bipolar junction transistors (BJT) in the exfoliated two-dimensional (2D) transition metal dichalcogenide (TMD) semiconductor WSe2 with both current and photocurrent gains.
