EENews Europe

Instead of using FinFET structures, engineers at the IBM-led Research Alliance at the SUNY Polytechnic Institute Colleges of Nanoscale Science and Engineering’s NanoTech Complex in Albany, NY, used a ‘gate-all-around’ (GAA) built with silicon nanosheets. For the last ten years IBM has been working on nanosheets where each 2D layer is one atom thick and stacked layers build up the structure of the transistor.

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