SUNY Polytechnic Institute graduate student Emma Rocco and Dr. Shadi Shahedipour-Sandvik, SUNY Poly Interim Vice President of Research Advancement and Graduate Studies, published collaborative research in Nature Scientific Reports, which shows for the first time the evidence for segregation of dopant acceptors in N-polar Gallium Nitride, a material used as a platform for the creation of power electronics, which are more robust than the typical silicon-based electronics. This is an important topic for its scientific value but also for various device technologies for high power, high temperature, and high-speed electronics.

Read the research report, “Hillock assisted p-type enhancement in N-polar GaN:Mg films grown by MOCVD.”

Researchers from SUNY Poly, University at Buffalo, Virginia Commonwealth University, and California Institute of Technology’s Jet Propulsion Laboratory collaborated on this research effort.