Nanomaterials

Herein, we report on the thickness-dependent effect of air exposure on the Raman and photoluminescence (PL) properties of GaTe flakes, with thicknesses spanning in the range of a few layers to 100 nm. We have developed a novel chemical passivation that results in complete encapsulation of the as-exfoliated GaTe flakes in ultrathin hydrogen–silsesquioxane (HSQ) film.

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Dr. Spyros Galis' research has also been featured on the cover of Silicon-Based Nanomaterials: Technology and Applications