Biography

Vincent LaBella is a Professor of Nanoscale Science at SUNY Polytechnic Institute. He received a B.S. in Mechanical Engineering and a B.A. in Physics from Rutgers University in 1993. He received a Ph.D. in Physics from Rensselaer Polytechnic Institute in 1998 under the advisement of Professor Leo Schowalter and Carl Ventrice, Jr. in the fields of silicon MBE, scanning probes, and hot electron transport. He did a post-doc for 4 years at the University of Arkansas working with Paul Thibado in the fields of III-V MBE growth, surface science, and spintronics. In September of 2002 he joined the faculty at the University at Albany - SUNY in the College of Nanoscale Science and Engineering. He was awarded the New York State Foundation for Science, Technology and Innovation (NYSTAR) Distinguished Professor Award in 2002 and The Faculty Early Career Development (CAREER) Program award from the National Science Foundation in 2004. In 2014 he was elected as a fellow of the American Physical Society for his pioneering work involving classroom response systems (clickers). In 2015 he received the SUNY Chancellor’s Award for Excellence in Scholarship and Creative Activities. He has published over 50 peer reviewed journal articles and given numerous talks and invited presentations. His current research is focused on visualizing the electrostatic barrier at the interface between materials to nanoscale dimensions in materials that have high technological impact.

Watch Professor LaBella's "Inside CNSE" video interview on the use of spintronics in computers and other devices

Read Professor LaBella's Nanotechnology Now Web site article: Determining Atomic Surface Structure Using Atomic Scale Imaging and First Principles Theory

Degrees

• Ph.D., Physics, Rensselaer Polytechnic Institute (1998)
• B.S. Mechanical Engineering, Rutgers University (1993)
• B.A. Physics, Rutgers University (1993)

Honors

Fellow of the American Physical Society

Areas of Research

• Schottky Barrier Visualization
• Surface and Interfaces
• Scanning Tunneling Microscopy
• Ballistic Electron Emission Microscopy 

Description of Research

Professor LaBella’s research is focused on the nanoscale visualization of the electrostatic barrier that forms at the interface between materials.  These interfaces and their resulting barriers are the foundation of all modern digital integrated circuit technology found on computer chips such as diodes and transistors that power all of our electronic gadgetry.  The flow of electrons (electricity) is controlled by these barriers and enable the creation of digital logic circuits.

The ability to visualize these barriers to nanoscale dimensions is crucial to the future development of highly scaled devices with nanoscale contact areas.  Dr. LaBella has pioneered the visualization method that employs a combination of experimental data acquired with a scanning tunneling microscope (STM) using a technique called ballistic electron emission microscopy (BEEM), and computational modeling of the physics of hot electron transport through the materials.  Insight into the interface composition and resulting uniformity of the electrostatics is gained by fitting the model to the experimental data.

He has a combined UHV materials deposition system for metals, semiconductors, and oxides in situ with a low temperature scanning tunneling microscope (Omicron) that is capable of ballistic electron emission microscopy measurements. His group has developed customized electronics and robust software to control the STM, which enables data collection from days to weeks.  The large data sets are managed utilizing databases such as MySQL and the computational modeling is performed using parallel computational methods with open standard libraries and languages such as CUDA/C++/OpenML/Boost/C++Amp. In addition his group has a vibrating sample magnetometer and custom designed cryostat for magneto transport measurements.

Recent Publications

Nanoscale Schottky Barrier Visualization Utilizing Computational Modeling and Ballistic Electron Emission Microscopy,
Westly Nolting, Chris Durcan, Steven Gassner, Joshua Goldberg, Robert Balsano, Vincent P. LaBella,
Journal of Applied Physics, 123 245302 (2018).
(full text and abstract) DOI: 10.1063/1.5029913

Fermi Level Manipulation through Native Doping in the Topological Insulator Bi2Se3,
Lee A. Walsh, Avery J. Green, Rafik Addou, Westly Nolting, Christopher R. Cormier, Adam T. Barton, Tyler R. Mowll, Ruoyu Yue, Ning Lu, Jiyoung Kim, Moon J. Kim, Vincent P. LaBella, Carl A. Ventrice, Stephen McDonnell, William G. Vandenberghe, Robert M. Wallace, Alain Diebold, Christopher L. Hinkle,
ACS Nano, 12 6310 (2018).
(full text and abstract) DOI: 10.1021/acsnano.8b03414

Detection of Silicide Formation in Nanoscale Visualization of Interface Electrostatics,
Westly Nolting, Chris Durcan, Vincent P. LaBella,
Applied Physics Letters, 110 141606 (2017).
(full text and abstract) DOI: 10.1063/1.4979874

Economical rotatable holder for magneto-transport measurements,
Avyaya J. Narasimham, Daniel Pennock, Graham J. Potter, Brian Taylor, Vincent P. LaBella,
Journal of Vacuum Science and Technology B (Microelectronics and Nanometer Structures), 35 023201 (2017).
(full text and abstract) DOI: 10.1116/1.4974488

Nanoscale Schottky barrier mapping of thermally evaporated and sputter deposited W/Si(001) diodes using ballistic electron emission microscopy,
Westly Nolting, Chris Durcan, Avyaya J. Narasimham, Vincent P. LaBella,
Journal of Vacuum Science and Technology B (Microelectronics and Nanometer Structures), 34 04J110 (2016).
(full text and abstract) DOI: 10.1116/1.4958721

Relating Spatially Resolved Maps of the Schottky Barrier Height to Metal/Semiconductor Interface Composition,
Robert Balsano, Chris Durcan, Akitomo Matsubayashi, Avyaya J. Narasimham, Vincent P. LaBella,
Journal of Applied Physics, 119 095302 (2016).
(full text and abstract) DOI: 10.1063/1.4942659

Time dependent changes in Schottky barrier mapping of the W/Si(001) interface utilizing Ballistic Electron Emission Microscopy,
Chris A. Durcan, Robert Balsano, Vincent P. LaBella,
Journal of Applied Physics, 117 245306 (2015).
(full text and abstract) DOI: 10.1063/1.4922972

Pulsed-N2 assisted growth of 5-20 nm thick β-W films,
Avyaya J. Narasimham, Richard J. Matyi, Avery Grene, Prasanna Khare, Tuan Vo, Alain Diebold, Vincent P. LaBella,
AIP Advances, 5 117107 (2015).
(full text and abstract) DOI: 10.1063/1.4935372

Synthesis and properties of ferromagnetic nanostructures embedded within a high-quality crystalline silicon matrix via ion implantation and nanocavity assisted gettering processes,
Girish Malladi, Mengbing Huang, Thomas Murray, Steven Novak, Akitomo Matsubayashi, Vincent LaBella, Hassaram Bakhru,
Journal of Applied Physics, 116 054306 (2014).
(full text and abstract) DOI: 10.1063/1.4892096

Microstructure fabrication process induced modulations in CVD graphene,
Akitomo Matsubayashi, Zhenjun Zhang, Ji Ung Lee, Vincent P. LaBella,
AIP Advances, 4 127143 (2014).
(full text and abstract) DOI: 10.1063/1.4905068

Fabrication of 5-20 nm thick b-W films,
Avyaya J. Narasimham, Manasa Medikonda, Akitomo Matsubayashi, Prasanna Khare, Hyuncher Chong, Richard J. Matyi, Alain Diebold, Vincent P. LaBella,
AIP Advances, 4 117139 (2014).
(full text and abstract) DOI: 10.1063/1.4903165

Nanoscale Mapping of the W/Si(001) Schottky Barrier,
Chris A. Durcan, Robert Balsano, Vincent P. LaBella,
Journal of Applied Physics, 116 023705 (2014).
(full text and abstract) DOI: 10.1063/1.4889851

Schottky barrier height measurements of Cu/Si(001), Ag/Si(001), and Au/Si(001) interfaces utilizing ballistic electron emission microscopy and ballistic hole emission microscopy,
Robert Balsano, Akitomo Matsubayashi, Vincent P. LaBella,
AIP Advances, 3 112110 (2013).
(full text and abstract) DOI: 10.1063/1.4831756

Characterization of Metal Oxide Layers Grown on CVD Graphene,
Akitomo Matsubayashi, Joseph Abel, Dhiraj Prasad Sinha, Ji Ung Lee, Vincent P. LaBella,
Journal of Vacuum Science and Technology A, 31 021506 (2013).
(full text and abstract) DOI: 10.1116/1.4792068

Signatures of the semiconductor crystallographic orientation on the charge transport across non-epitaxial diodes,
John J. Garramone, Joseph R. Abel, Salvador Barraza-Lopez, Vincent P. LaBella,
Applied Physics Letters, 100 252102 (2012).
(full text and abstract) DOI: 10.1063/1.4729622

Fabrication of an Electrical Spin Transport Device utilizing a Diazonium Salt/Hafnium Oxide Interface Layer on Epitaxial Graphene grown on 6H-SiC(0001),
J. Abel, A. Matsubayashi, T. Murray, C. Dimitrakopoulos, D. B. Farmer, Ali Afzali, A. Grill, C. Y Sung, V. P. LaBella,
Journal of Vacuum Science and Technology B (Microelectronics and Nanometer Structures), 30 04E109 (2012).
(full text and abstract) DOI: 10.1116/1.4732460

Low Cost Cyrogenic High Vacuum Sample Holder for In-Plane Magneto-transport Studies,
Joseph Abel, Akitomo Matsubayashi, Vincent P. LaBella,
Journal of Vacuum Science and Technology B (Microelectronics and Nanometer Structures), 30 043201 (2012).
(full text and abstract) DOI: 10.1116/1.4732506

Schottky barrier and attenuation length for hot hole injection in non-epitaxial Au on p type GaAs,
Ilona Sitnitsky, John J. Garramone, Joseph Abel, Peng Xu, Steven D. Barber, Matt L. Ackerman, J. Kevin Schoelz, Paul M. Thibado, Vincent P. LaBella,
Journal of Vacuum Science and Technology B (Microelectronics and Nanometer Structures), 30 04E110 (2012).
(full text and abstract) DOI: 10.1116/1.4734307

Temperature Dependent Spin Precession Measurements in Tri-Layer Graphene Utilizing Co/Graphene Contacts,
J. Abel, A. Matsubayashi, J. J. Garramone, V. P. LaBella,
Journal of Vacuum Science and Technology B (Microelectronics and Nanometer Structures), 30 03D115 (2012).
(full text and abstract) DOI: 10.1116/1.4709768

Hot-Electron Transport Studies of the Ag/Si(001) Interface Using Ballistic Electron Emission Microscopy,
J. J. Garramone, J. R. Abel, I. L. Sitnitsky, V. P. LaBella,
Journal of Vacuum Science and Technology A, 28 643 (2010).
(full text and abstract) DOI: 10.1116/1.3397795

Studies of Al₂O₃ Barriers for Use in Tunnel Junctions For NonLocal Spin Detection Experiments
J. Abel, J. J. Garramone, I. L. Sitnitsky, V. P. LaBella
Journal of Vacuum Science and Technology A 28 702 (2010)
(full text and abstract) doi: 10.1116/1.3386589

Hot-Electron Transport Studies of the Ag/Si(001) Interface Using Ballistic Electron Emission Microscopy
J. J. Garramone, J. R. Abel, I. L. Sitnitsky, V. P. LaBella
Journal of Vacuum Science and Technology A 28 643 (2010)
(full text and abstract) doi: 10.1116/1.3397795

Measurement of the Hot Electron Attenuation Length of Copper
J. J. Garramone, J. R. Abel, I. L. Sitnitsky, L. Zhao, I. Appelbaum, V. P. LaBella
Applied Physics Letters 96 062105 (2010)
(full text and abstract) doi: doi:10.1063/1.3299712

Hot Electron Transport Studies of the Cu/Si(001) Interface Using Ballistic Electron Emission Microscopy
J. J. Garramone, J. R. Abel, I. L. Sitnitsky, R. L. Moore, V. P. LaBella
Journal of Vacuum Science and Technology B 27 2044 (2009)
(full text and abstract) doi: 10.1116/1.3136761

Above Room Temperature Ferromagnetic Silicon
Vincent LaBella, Mengbing Huang, Martin Bolduc, Chaffra Awo-Affouda
United States Patent No. 7405086, Issued Aug 29, 2008.

Effect of interface band structure on hot-electron attenuation lengths in Au thin films
A. J. Stollenwerk, E. J. Spadafora, J. J. Garramone, R. J. Matyi, R. L. Moore, V. P. LaBella
Physical Review B 77 033416 (2008)
(full text and abstract) doi: 10.1103/PhysRevB.77.033416

Measuring Spin Dependent Hot Electron Transport Through a Metal-Semiconductor Interface Using Spin-Polarized Ballistic Electron Emission Microscopy
A. J. Stollenwerk, M. R. Krause, J. J. Garramone, E. J. Spadafora, V. P. LaBella
Physical Review B 76 195311 (2007)
(full text and abstract) doi: 10.1103/PhysRevB.76.195311

Measurement of the clustering energy for manganese silicide islands on Si(001) by Ostwald Ripening
M. R. Krause, A. J. Stollenwerk, M. Licurse, V. P. LaBella
Applied Physics Letters 91 041903 (2007)
(full text and abstract) doi: 10.1063/1.2766681

Implantation Damage Study in Ferromagnetic Mn-implanted Si
C. Awo-Affouda, M. Bolduc, V. P. LaBella
Journal of Vacuum Science and Technology A 25 976 (2007)
(full text and abstract) doi: 10.1116/1.2713117

Electronic structure changes of Si(001) (2×1) from subsurface Mn observed by STM
M. R. Krause, A. J. Stollenwerk, J. Reed, V. P. LaBella, M. Hortamani, P. Kratzer, M. Scheffler
Physical Review B 75 205326 (2007)
(full text and abstract) doi: 10.1103/PhysRevB.75.205326

Atmospheric oxygen in Mn doped GaAs/GaAs(0 0 1) thin films grown by molecular beam epitaxy 
J.F. Xu, P.M. Thibado, C. Awo-Affouda, R. Moore, V.P. LaBella
Journal of Crystal Growth 301-302 54 (2007)
(full text and abstract) doi: 10.1016/j.jcrysgro.2006.11.234

Probing the hot electron transport properties and interface band structure of Fe/Si(001) and Fe₈₁C₁₉/Si(001) Schottky diodes
A. J. Stollenwerk, M. R. Krause, D. H. Idell, R. Moore, V. P. LaBella
Physical Review B 74 155328 (2006)
(full text and abstract) doi: 10.1103/PhysRevB.74.155328

Ballistic electron transport properties of Fe-based films on Si(001)
A. J. Stollenwerk, M. R. Krause, D. H. Idell, R. Moore, V. P. LaBella
Journal of Vacuum Science and Technology B 24 2009 (2006)
(full text and abstract) doi: 10.1116/1.2213264

Annealing Temperature Effects on the Structure of Ferromagnetic Mn-implanted Si
M. Bolduc, C. Awo-Affouda, M. B. Huang, F. Ramos, V. P. LaBella
Journal of Vacuum Science and Technology A 24 1648 (2006)
(full text and abstract) doi: 10.1116/1.2194921

Observation of Crystallite Formation in Ferromagnetic Mn-implanted Si
C. Awo-Affouda, M. Bolduc, M. B. Huang, F. Ramos, K. A. Dunn, B. Thiel, G. Agnello, V. P. LaBella
Journal of Vacuum Science and Technology A 24 1644 (2006)
(full text and abstract) doi: 10.1116/1.2189265

Hot Electron Transport Across Manganese Silicide Layers on the Si(001) Surface
A. Stollenwerk, M. Krause, R. Moore, V. P. LaBella
Journal of Vacuum Science and Technology A 24 1610 (2006)
(full text and abstract) doi: 10.1116/1.2206195

Ostwald ripening of manganese silicide islands on Si(001)
M. R. Krause, A. Stollenwerk, M. Licurse, V. P. LaBella
Journal of Vacuum Science and Technology A 24 1480 (2006)
(full text and abstract) doi: 10.1116/1.2167070

Redistribution of Mn upon Annealing in Ferromagnetic Mn-implanted Si
M. Bolduc, C. Awo-Affouda, M. B. Huang, F. Ramos, V. P. LaBella
Material Research Society Symposium Proceedings 908e 3 (2006)

INVITED: Arsenic-Rich GaAs(001) Surface Structure
Vincent LaBella, Michael Krause, Zhao Ding, Paul M. Thibado
Surface Science Reports 60 1 (2005)
(full text and abstract) doi: 10.1016/j.surfrep.2005.10.001

Investigation of the Structural Properties of Ferromagnetic Mn-implanted Si
M. Bolduc, C. Awo-Affouda, A. Stollenwerk, M. B. Huang, F. Ramos, V. P. LaBella
Nuclear Instruments & Methods in Physics Research; Section B 242 367 (2005)
(full text and abstract) doi: 10.1016/j.nimb.2005.08.132

Combined molecular beam epitaxy low temperature scanning tunneling microscopy system: enabling atomic scale characterization of semiconductor surfaces and interfaces
M. Krause, A. Stollenwerk, C. Awo-Affouda, B. Maclean, V. P. LaBella
Journal of Vacuum Science and Technology B 23 1684 (2005)
(full text and abstract) doi: 10.1116/1.1941167

Above room temperature ferromagnetism in Mn-ion implanted Si
M. Bolduc, C. Awo-Affouda, A. Stollenwerk, M. B. Huang, F. G. Ramos, G. Agnello, V. P. LaBella
Physical Review B 71 033302 (2005)
(full text and abstract) doi: 10.1103/PhysRevB.71.033302

Magnetic and Structural Properties of Mn-implanted Si
M. Bolduc, C. Awo-Affouda, A. Stollenwerk, M. B. Huang, F. Ramos, G. Agnello, V. P. LaBella
Material Research Society Symposium Proceedings 853E 4 (2005)

Electron-beam evaporated cobalt films on molecular beam epitaxy prepared GaAs(001)
Z. Ding, P. M. Thibado, C. Awo-Affouda, V. P. LaBella
Journal of Vacuum Science and Technology B 22 2068 (2004)
(full text and abstract) doi: 10.1116/1.1771674

Time-evolution of the GaAs(001) pre-roughening process
Z. Ding, D. W. Bullock, P. M. Thibado, V. P. LaBella, K. Mullen
Surface Science 540 491 (2003)
(full text and abstract) doi: 10.1016/S0039-6028(03)00916-6

Tool and method for in situ vapor phase deposition source material reloading and maintenance
Paul M. Thibado, Vincent P. LaBella, Daniel W. Bullock
United States Patent No. 6551405, Issued May 23, 2003.

Atomic-Scale Observation of Temperature and Pressure Driven Preroughening and Roughening
Z. Ding, D. W. Bullock, P. M. Thibado, V. P. LaBella, K. Mullen
Physical Review Letters 90 216109 (2003)
(full text and abstract) doi: 10.1103/PhysRevLett.90.216109

Role of aperiodic surface defects on the intensity of electron diffraction spots
D. W. Bullock, Z. Ding, P. M. Thibado, V. P. LaBella
Applied Physics Letters 82 2586 (2003)
(full text and abstract) doi: 10.1063/1.1568161

Dynamics of spontaneous roughening on the GaAs(001)-(2×4) surface
Z. Ding, D. W. Bullock, W. F. Oliver, P. M. Thibado, V. P. LaBella
Journal of Crystal Growth 251 35 (2003)
(full text and abstract) doi: 10.1016/S0022-0248(02)02272-8

Simultaneous surface topography and spin-injection probability
D. W. Bullock, V. P. LaBella, Z. Ding, P. M. Thibado
Journal of Vacuum Science and Technology B 21 67 (2003)
(full text and abstract) doi: 10.1116/1.1532022

Mapping the spin-injection probability on the atomic scale
D. W. Bullock, V. P. LaBella, Z. Ding, P. M. Thibado
Journal of Superconductivity 15 37 (2002)
(full text and abstract) doi: 10.1023/A:1014023126179

Enhancing the Student-Instructor Interaction Frequency
D. W. Bullock, V. P. LaBella, T. Clingan, Z. Ding, G. Stewart, P.M. Thibado
The Physics Teacher 40 535 (2002)
(full text and abstract) doi: 10.1119/1.1534821

Microscopic structure of spontaneously formed islands on the GaAs(001)-(2×4) reconstructed surface
V. P. LaBella, Z. Ding, D. W. Bullock, C. Emery, P. M. Thibado
Journal of Vacuum Science and Technology B 19 1640 (2001)
(full text and abstract) doi: 10.1116/1.1386376

Spatially resolved spin-injection probability for gallium arsenide
V. P. LaBella, D. W. Bullock, Z. Ding, C. Emery, A. Venkatesan, W. F. Oliver, G. J. Salamo, P. M. Thibado, M. Mortazavi
Science 292 1518 (2001)
(full text and abstract) doi: 10.1126/science.292.5521.1518

Enabling electron diffraction as a tool for determining substrate temperature and surface morphology
V. P. LaBella, D. W. Bullock, C. Emery, Z. Ding, P. M. Thibado
Applied Physics Letters 79 3065 (2001)
(full text and abstract) doi: 10.1063/1.1416477

INVITED: A union of the real-space and reciprocal-space view of the GaAs(001) surface
V. P. LaBella, Z. Ding, D. W. Bullock, C. Emery, P. M. Thibado
International Journal of Modern Physics B 15 2301 (2001)
(full text and abstract) doi: 10.1142/S0217979201005647

Microscopic view of a two-dimensional lattice-gas Ising system within the grand canonical ensemble
V. P. LaBella, D. W. Bullock, M. Anser, Z. Ding, C. Emery, L. Bellaiche, P. M. Thibado
Physical Review Letters 84 4152 (2000)
(full text and abstract) doi: 10.1103/PhysRevLett.84.4152

A Novel STM Imaging Mechanism is Used to Determine the Atomic Structure of the GaAs(001)-(2×4) Surface
V. P. LaBella, D. W. Bullock, P. M. Thibado, P. Kratzer, M. Scheffler
Omicron Newsletter 4 4 (2000)

Monte Carlo derived diffusion parameters for Ga on the GaAs(001)- (2×4) surface: A molecular beam epitaxy-scanning tunneling microscopy study
V. P. LaBella, D. W. Bullock, Z. Ding, C. Emery, W. G. Harter, P. M. Thibado
Journal of Vacuum Science and Technology A 18 1526 (2000)
(full text and abstract) doi: 10.1116/1.582379

Reflection high-energy electron diffraction and scanning tunneling microscopy study of InP(001) surface reconstructions
V. P. LaBella, Z. Ding, D. W. Bullock, C. Emery, P. M. Thibado
Journal of Vacuum Science and Technology A 18 1492 (2000)
(full text and abstract) doi: 10.1116/1.582373

Atomic structure of the GaAs(001)-(2×4) surface resolved using scanning tunneling microscopy and first-principles theory
V. P. LaBella, H. Yang, D. W. Bullock, P. M. Thibado, P. Kratzer, M. Scheffler
Physical Review Letters 83 2989 (1999)
(full text and abstract) doi: 10.1103/PhysRevLett.83.2989

Role of As₄ in Ga diffusion on the GaAs(001)-(2×4) surface: A molecular beam epitaxy-scanning tunneling microscopy study
H. Yang, V. P. LaBella, D. W. Bullock, P. M. Thibado
Journal of Vacuum Science and Technology B 17 1778 (1999)
(full text and abstract) doi: 10.1116/1.590825

Activation energy for Ga diffusion on the GaAs(001)-(2×4) surface: an MBE-STM study
H. Yang, V. P. LaBella, D. W. Bullock, Z. Ding, J. B. Smathers, P. M. Thibado
Journal of Crystal Growth 201-202 88 (1999)
(full text and abstract) doi: 10.1016/S0022-0248(98)01296-2

Measurements of epitaxially grown Pt/CaF₂/Si(111) structures by ballistic electron emission microscopy and scanning tunneling microscopy
V. P. LaBella, Y. Shusterman, L. J. Schowalter, C. A. Ventrice, Jr.
Journal of Vacuum Science and Technology A 16 1692 (1998)
(full text and abstract) doi: 10.1116/1.581286

Ballistic electron emission microscopy measurements of epitaxially grown Pt/CaF₂/Si(111) structures
V. P. LaBella, C. A. Ventrice, Jr., L. J. Schowalter
Applied Surface Science 123-124 213 (1998)
(full text and abstract) doi: 10.1016/S0169-4332(97)00543-6

Scanning tunneling microscope and ballistic electron emission spectroscopy studies of molecular beam epitaxially grown Pt/CaF₂/Si(111) structures
V. P. LaBella, L. J. Schowalter, C. A. Ventrice, Jr.
Journal of Vacuum Science and Technology B 15 1191 (1997)
(full text and abstract) doi: 10.1116/1.589437

Design of a scanning tunneling microscope for in situ topographic and spectroscopic measurements within a commercial molecular beam epitaxy machine
C. A. Ventrice, Jr., V. P. LaBella, L. J. Schowalter
Journal of Vacuum Science and Technology A 15 830 (1997)
(full text and abstract) doi: 10.1116/1.580716

The Effect of Strain Relaxation Mechanisms on the Electrical Properties of Epitaxial CaF₂/Si(111) Heterostructures
L.J. Schowalter, B.M. Kim, T.G. Thundat, Carl A. Ventrice, Jr., V.P. LaBella
Material Research Society Symposium Proceedings 466 21 (1997)

Hot-electron scattering at Au/Si(100) Schottky interfaces measured by temperature dependent ballistic electron emission microscopy
C. A. Ventrice, Jr., V. P. LaBella, G. Ramaswamy, H. -P. Yu, L. J. Schowalter
Applied Surface Science 104-105 274 (1996)
(full text and abstract) doi: 10.1016/S0169-4332(96)00215-2

Measurement of hot-electron scattering processes at Au/Si(100) Schottky interfaces by temperature-dependent ballistic-electron-emission microscopy
C. A. Ventrice, Jr., V. P. LaBella, G. Ramaswamy, H. -P. Yu, L. J. Schowalter
Physical Review B 53 3952 (1996)
(full text and abstract) doi: 10.1103/PhysRevB.53.3952

Anomalous attenuation of spin-entropy waves in superfluid ³He-A₁
M. Bastea, Y. Okuda, V. LaBella, H. Kojima
Physical Review Letters 73 1126 (1994)
(full text and abstract) doi: 10.1103/PhysRevLett.73.1126