SUNY Poly research published in Journal of Vacuum Science and
Technology B: Electrical properties related to growth defects in
metamorphic GaSb films on Si
Published:
Thursday, January 19, 2017 - 11:55
Journal of Vacuum Science and Technology B
This paper reports on correlation of growth-related defects and electrical properties in GaSb films grown on different Si substrates using metamorphic buffers. Large lattice mismatch between GaSb and Si (∼11%) results in the formation of threading dislocations (TDs) and microtwins (MTs) along with antiphase domains due to the lack of inversion symmetry in III-V's.
