SUNY Poly's Dr. Fatemeh (Shadi) Shahedipour-Sandvik and Isra Mahaboob's 'Drain Voltage Induced Secondary Effects in AlGaN/GaN HEMTs with Integrated Body-Diode' published in IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices
Integration of body-diode-based back-gate control in AlGaN/GaN high-electron mobility transistors (HEMTs) was recently demonstrated by the authors to enable dynamic control of the device characteristics. Here, we present an experimental study of drain-voltage-induced secondary effects in AlGaN/GaN HEMTs with integrated body-diode. Both the three-terminal and four-terminal device characteristics are studied to understand the secondary effects in this configuration.