1. TID effects in reconfigurable MOSFETs using two-dimensional semiconductor WSe2, Prathamesh Dhakras, Pratik Agnihotri, Hassaram Bakhru, Harold L. Hughes, and Ji Ung Lee, IEEE Trans. on Nuclear Science, 09 November 2017.
2. Three fundamental devices in one: a reconfigurable multifunctional device in two-dimensional WSe2, P. Dhakras, P. Agnihotri, and J.U. Lee, Nanotechnology 28, 265203 (2017). (Featured in PhysOrg: https://phys.org/news/2017-06-in-device-alternative-law.html, eeNews(Europe), http://www.eenewseurope.com/news/more-moore-2d-semiconductor-packs-3-functions-one-device, http://www.smart2zero.com/news/3-1-semiconductor-morphs-multiple-devices, electronicsweekly, https://www.electronicsweekly.com/news/business/sun-poly-makes-device-can-pin-diode-mosfet-bjt-2017-06/); https://www.elektormagazine.com/news/one-device-is-pin-diode-mosfet-or-bjt; http://www.europapress.es/ciencia/laboratorio/noticia-dispositivo-tres-alternativa-cumplir-ley-moore-20170614174633.html).
3. Understanding magnetic focusing in graphene p-n junctions through quantum modeling, S.W. LaGasse and Ji Ung Lee, Phys. Rev. B 95, 155433 (2017).
4. Theory of quantum transport in graphene devices with radiation induced Coulomb scatters, S. Lagasse, C. Cress, H. Hughes and J.U. Lee, IEEE Trans. On Nuclear Science, Vol. 2016.
5. Zero-dark leakage current single-walled carbon nanotube diodes, Prathamesh Dhakras and Ji Ung Lee, Appl. Phys. Lett. 109, 203114 (2016).
6. Theory of Landau level mixing in heavily graded graphene pn junctions, Samuel LaGasse and Ji Ung Lee, Phys. Rev. B,94, 165312 (2016).
7. Large Bandgap Shrinkage from Doping and Dielectric Interface in Semiconducting Carbon Nanotubes, Everett Comfort and Ji Ung Lee, Scientific Reports 6, Article number: 28520 (2016); June 24, 2016; doi:10.1038/srep28520
8. Bipolar Junction Transistors in Two-Dimensional WSe2 with Large Current and Photocurrent Gains, Pratik Agnihotri, Prathamesh Dhakras, and Ji Ung Lee* Article ASAP, Nano Lett DOI: 10.1021/acs.nanolett.6b01444, June 23, 2016. (Featured in Advances in Engr, https://advanceseng.com/nanotechnology-engineering/suny-poly-researchers-advance-bipolar-junction-transistors-two-dimensional-wse2-large-current-photocurrent-gains/)
9. Reverse degradation of nickel graphene junction by hydrogen annealing Zhenjun Zhang, Fan Yang, Pratik Agnihotri, Ji Ung Lee, Jim R. Lloyd, AIP Advances 6, 025301 (2016)
10. Edge-state transport in graphene p-n junctions in the quantum Hall regime, Nikolai N. Klimov, Son T. Le, J. Yan, Pratik Agnihotri, Everett Comfort, Ji Ung Lee, David B. Newell, Curt A. Richter, Phys. Rev. B 92, 241301 (R), 2015.
11. Atomistic modeling of suspended carbon nanotube FET under proton irradiation, Samuel W. LaGasse, Cory D. Cress, Harold L. Hughes, Patrick J. McMarr and Ji Ung Lee, IEEE Trans. On Nuclear Science, Vol. 62, pg 2881-2887, 2015.
12. Characterization of magnetic Ni clusters on graphene scaffold after high vacuum annealing, Zhenjun Zhang, Akitomo Matsubayashi , Benjamin Grisafe , Ji Ung Lee, James R. Lloyd, Materials Chemistry and Physics 170, pg 175–179, 2015.
13. Microstructure fabrication process induced modulations in CVD graphene, A. Matsubayashi, Z. Zhang, J.U. Lee and V. LaBella, AIP Advances 4, 127143 (2014).
14. Disorder DOS in supported graphene, J. Appl. Phys. (2014), D. Sinha and J. U. Lee,
15. Ideal Graphene/Silicon Schottky Junctions, Nano Lett 14, 4660 (2014), D. Sinha, J.U. Lee,
16. Florence J. Nelson, Juan-Carlos Idrobo, John D. Fite, Zoran L. Mišković, Stephen J. Pennycook,∥ Sokrates T. Pantelides,, Ji Ung Lee, and Alain C. Diebold, Electronic Excitations in Graphene in the 1–50 eV Range: The π and π + σ Peaks Are Not Plasmons, NanoLett, 2014
17. Substrate dielectric effects in graphene field effect transistors, Zhaoying Hu, Dhiraj Sinha, Michael Liehr, and Ji Ung Lee, J. App. Phys. 115, 194507 (2014).
18. Yong Q. An, J. E. Rowe, Daniel B. Dougherty, Ji Ung Lee, and Alain C. Diebold, Optical second-harmonic generation induced by electric current in graphene on the substrates of Si and SiC, Phys. Rev. B, 89, 115319 (2014).
19. Journal of Radiation Effects Research and Engineering is a controlled DoD journal published by DTRA (2014) – collaborative publication with Harold Hughes (NRL).
20. Intrinsic tolerance to total ionizing dose in gate-all-around MOSFETs, E. Comfort, M. Rodgers, W. Allen, S. Gausepohl, E.X. Zhang, M. Alles, H. Hughes, P. McMarr, and J.U. Lee, IEEE Trans on Nuclear Science, VOL. 60, NO. 6, DECEMBER 2013, 4483-4487.
21. Quantum Efficiency and Capture Cross Section of First and Second Excitonic Transitions of Single-Walled Carbon Nanotubes Measured through Photoconductivity, Argyrios Malapanis, Vasili Perebeinos,Dhiraj Prasad Sinha, Everett Comfort, and Ji Ung Lee, Nano Lett. 13, 3531–3538 (2013).
22. Characterization of metal oxide layers grown on CVD graphene, A. Matsubayashi, J. Abel, D.P. Sinha, J.U.Lee and V.P. LaBella, J. Vac. Sci. Technol. A, 31, 021506 (2013).
23. Enhanced optical second harmonic generation from the current-biased graphene/SiO2/Si structure, Yong Q. An, Florence Nelson, Ji Ung Lee and Alain Diebold, Nano Lett 13, 2104-2109, 2013.
24. Single Cell In-Vivo Carbon Nanotube Device with Multimodal Sensing Potential Alexandra Scavelli, Abhishek Gottipati, Everett Comfort, Sabarinath Jayaseelan, Thomas Murray, Michael Rizzolo, Scott Tenenbaum and Ji Ung Lee, AIP Advances 3, 032122 (2013); http://dx.doi.org/10.1063/1.4795408 (7 pages)
25. Manifestation of chiral tunneling at a tilted graphene p-n junction, R.N. Sajjad, S. Sutar, J.U. Lee and A.W. Ghosh, Phys. Rev. B 86, 155412 (2012).
26. Angle-dependent carrier transmission in graphene p-n junction, S. Sutar, E.S. Comfort, J. Liu, T. Taniguchi, K. Watanabe, and J.U. Lee, Nano Lett 12, 4460 (2012).
27. Enhanced ultraviolet response using graphene electrodes in organic solar cells, Zhouying Zhao, John D. Fite, Pradeep Haldar, and Ji Ung Lee, Appl. Phys. Lett. 101, 063305 (2012).
28. Single Exciton Quantum Logic Circuits, Ji Ung Lee, IEEE J. of Quantum Electronics, Vol 48, No. 9, pp.1159-1164, September 2012.
29. Parasitic capacitance removal of sub-100nm p-MOSFETs using capacitance-voltage measurements, D.R. Steinke, J. Piccirillo, S. Gausepohl, S. Vivekand, M. Rodgers, and Ji Ung Lee, Solid State Electronics, Vol. 68, pp 51-55, Feb. 2012.
30. Observation of the Urbach Tail in the effective density of states in carbon nanotubes, David A. Jones and Ji Ung Lee, Nano Lett. 11, 4176 (2011).
31. Current-Induced Cleaning of Adsorbates in Single-Walled Carbon Nanotube Diodes, A. Malapanis, E. Comfort, and Ji Ung Lee, Appl. Phys. Lett. 98, 263108 (2011).
32. Creation of individual defects at extremely high proton fluences in carbon nanotube p-n diodes, Everett S. Comfort, Matthew Fishman, Argyrios Malapanis, Harold Hughes, Patrick McMarr, Cory D. Cress, Hassaram Bakhru and Ji Ung Lee, IEEE Trans Nucl. Sci., vol 58, 2898-2903 (2011).
33. Measuring Carbon Nanotube Band Gaps through Leakage Current and Excitonic Transitions of Nanotube Diodes, A. Malapanis, D. A. Jones, E. Comfort and J.U. Lee, NanoLett, 11, 1946 (2011).
34. Spectroscopy of strongly localized excitons and band gap states in semiconducting single-walled carbon nanotubes, E.S. Comfort, D.A. Jones, A. Malapanis, Z.R. Robinson, M.T. Fishman, and J.U. Lee, Phys. Rev. B (Rapid Communications), 83, 081401(R), 2011 (Featured in Virtual Journal of Nanoscale Science and Technology, Vol. 23, Iss. 7, Feb. 21, 2011).
35. Optical properties of large-area polycrystalline chemical vapor deposited graphene by spectroscopic ellipsometry, F. J. Nelson, V. K. Kamineni, T. Zhang, E. S. Comfort, J. U. Lee, and A. C. Diebold, Appl. Phys. Lett. 97, 253110 (2010).
36. Reconfigurable multi-function logic based on graphene P-N junctions., Sansiri Tanachutiwat, Ji Ung Lee, Wei Wang, Chun Yung Sung, IEEE/ACM Design Automation Conference (DAC), pp. 883-888, June 2010.
37. Bandgap renormalization in SWNTs: Origin of the ideal diode behavior in carbon nanotube p-n structures, Ji Ung Lee, Phys. Rev. B, Vol 75, pp. 075409:1-5 (2007). (Featured in Virtual Journal of Nanoscale Science and Tech, Vol 15, Iss. 8)
38. Direct probe of excitonic and continuum transitions in the Photocurrent Spectroscopy of Carbon Nanotube pn Diodes, Ji Ung Lee, Peter J. Codella, and Matthew Pietrzykowski, Appl. Phys. Lett., Vol 90, pp 053103:1-3 (2007). (Featured in Virtual Journal of Nanoscale Science and Tech, Vol 15, Iss. 6).
39. Photovoltaic Effect in Ideal Carbon Nanotube Diodes, Ji Ung Lee, Appl. Phys. Lett., Vol 87, pp 073101:1-3 (2005) (Cover article, August 15th, 2005). (Also featured in Virtual Journal of Nanoscale Science and Tech, local news).
40. Evolution of charge emission for amorphous silicon FETs exposed to radiation, S. Zelakiewicz, A. Couture, S. Bogdanovich, J-U Lee and G. Possin, Nuclear Instruments and Methods in Physics Research A, Vol 546, pp 296-299 (2005).
41. Carbon nanotube p-n junction diodes, J. U. Lee, P. P. Gipp, and C. M. Heller Appl. Phys. Lett., Vol 85, pp 145-147 (2004) (Cover article, July 5th, 2004). (Featured in Physics Today (September, 2004), Popular Mechanics (October, 2004), Small Times, CNN, MSNBC, and other venues. Also featured in Virtual Journal of Nanoscale Science and Tech).
42. Diffusion-limited transport in the off-state of amorphous Si thin-film transistors, J. U. Lee and G. E. Possin, Appl. Phys. Lett., Vol 82, pp 1302-1304 (2003).
43. Interlayer phase correlation of the vortex system around the coupling transition in Bi2Sr2CaCu2Oy containing columnar defects Y. Tsuchiya, T. Hanaguri, H. Yasuda, A. Maeda, M. Sasase, K. Hojou, D. G. Steel, J. U. Lee, and D. J. Hofman , Phys. Rev. B, Vol 59, pp 11568-11574 (1999).
44. Pinning effect on critical dynamics in Tl2Ba2CaCu2O8 films before and after introducing columnar defects, Jin-Tae Kim; Park, Y.K.; Park, J.-C.; Kang, W.N.; Chu, C.W.; Lim, H.R.; Kim, D.H.; Lee, J.U.; Gray, K.E.; Applied Superconductivity, IEEE Transactions on, Volume: 9 , Issue: 2 , pp 2296 – 2299, (June 1999).
45. Observation of coherent modes of Josephson votices in Bi2Sr2CaCu2Ox, J.U. Lee, P. Guptasarma, D. Hornbaker, A. El-Kortas, D. Hinks, and K. E. Gray, Appl. Phys. Lett., Vol 71, pp 1412-1414 (1997).
46. Effects of damping on the dynamics of Josephson votex in Bi2Sr2CaCu2Ox, Ji Ung Lee and James E. Nordman, Physica C, Vol 277, pp 7-12 (1997).
47. Josephson vortex flow in superconducting single-crystal Bi2Sr2CaCu2Ox
Ji Ung Lee, James E. Nordman, and Gert Hohenwarter, Appl. Phys. Lett., Vol 67, pp 1471-1473 (1995).
48. RF coupling to single crystal BSCCO under c-axis bias
Hohenwarter, G.K.G.; Laundrie, A.W.; Lee, J.U.; Beyer, J.B.; Nordman, J.E.; Applied Superconductivity, IEEE Transactions on , Volume: 5 , Issue: 2 , pp 3195 – 3198 (June 1995).
49. Low magnetic field sensitivity of c-axis transport in BSCCO (2212) single crystals, Ji Ung Lee; Hohenwarter, G.; Kelley, R.J.; Nordman, J.E.;Applied Superconductivity, IEEE Transactions on , Volume: 5 , Issue: 2 , pp 2543 – 2546 (June 1995).
50. Magnetic field sensitivity of variable thickness microbridges in TBCCO, BSCCO, and YBCO, Davidson, B.A.; Redwing, R.D.; O'Callaghan, J.; Raissi, F.; Ji Ung Lee; Burke, J.P.; Hohenwarter, G.K.G.; Nordman, J.E.; Beyer, J.B.; Liou, S.H.; Eckstein, J.; Siegal, M.P.; Hou, S.Y.; Phillips, J.M.; Applied Superconductivity, IEEE Transactions on , Volume: 4 , Issue: 4 , pp 228 – 235 (December 1994).
51. Effects of deposition conditions on stoichiometry of off-axis RF sputtered BiSrCaCuO thin films, Yang, Y.F.; Nordman, J.E.; Lee, J.U., Applied Superconductivity, IEEE Transactions on , Volume: 3 , Issue: 1 , pp 1543 – 1546 (March 1993).
52. Effects of Target Presputtering on Stoichiometry of Sputtered Bi-Sr-Ca-Cu-O Thin Films, Y.F. Yang, J.U. Lee, J.E. Nordman, J. of Vac. Sci. and Tech. A, Vol 10, No. 5, pp 3288-3291 (September 1992).
