Degrees

• Ph.D., ECE Department, North Carolina State University, Raleigh, NC (2012)
• M.S., ECE Department, Korea University, Seoul, South Korea (2002)
• B.S., ECE Department, Korea University, Seoul, South Korea (2000)

Areas of research

• Semiconductor device physics, solid state devices
• Design and computer simulation of power semiconductor devices
• Fabrication technology of silicon and post-silicon (wide bandgap, SiC and others) materials

Research Website: https://sunypoly.edu/research/woongje-sung.html

Professional experience

• North Carolina State University, Raleigh, NC (2013-2016): Research Assistant Professor; development of 1200V SiC MOSFET and JBS Diode, edge termination techniques for 3.3kV and 4.5kV SiC devices, the first demonstration of SiC Symmetric Blocking GTO, and novel edge termination techniques using an angled dicing blade (Bevel-JTE)
• Samsung Advanced Institute of Technology, Kiheung, South Korea (2012): Research Staff; development of 1200V SiC MOSFETs
• Dongbu Hitek, Bucheon, South Korea (2002-2006): Senior Process Integration Engineer; process integration for 0.35um BCD technology, developed CMOS, BJT, LDMOS, DEMOS, and passive devices

Recent publications

• Woongje Sung, B. J. Baliga, and Alex Q. Huang, "Area-Efficient Bevel-Edge Termination Techniques for SiC High-Voltage Devices," IEEE Transaction on Electron Devices, vol.63, no.4, pp.1630-1636, Apr. 2016;
• Yifan Jiang, Woongje Sung, Xiaoqing Song, Haotao Ke, Siyang Liu, B. J. Baliga, A. Q. Huang, and Edward Van Brunt, “10kV SiC MPS diodes for high temperature applications,” Proceedings of ISPSD 2016, pp. 43-46, 12-16, June, 2016 
• Anant Agarwal, Woongje Sung, Laura Marlino, Pawel Gradzki, John Muth, Robert Ivester, and Nick Justice, “Wide Band Gap Semiconductor Technology for Energy Efficiency,” Materials Science Forum, Vols. 858, pp. 797-802,2016;
• Woongje Sung, and B. J. Baliga, “Design and Economic Considerations to Achieve the Price Parity of SiC MOSFETs with Silicon IGBTs,” Materials Science Forum, Vols. 858, pp. 889-893,2016;
• Woongje Sung, Alex Q. Huang, and B. J. Baliga, “Bevel Junction Termination Extension (Bevel-JTE) – A New Edge Termination Technique for 4H-SiC High Voltage Devices,” Electron Device Letters, IEEE , vol.36, no.6, pp.594-596, June 2015;
• Woongje Sung, Alex Q. Huang, B. J. Baliga, Inhwan Ji, Haotao Ke, Douglas C. Hopkins, “The First Demonstration of Symmetric Blocking SiC P-type Gate Turn-Off (GTO) Thyristor,” Proceedings of ISPSD 2015, pp. 257-260, 10-14, May, 2015
• Lin Cheng, John W. Palmour, Anant K. Agarwal, Scott T. Allen, Edward V. Brunt, Gangyao Wang, Vipindas Pala, Woongje Sung, Alex Q. Huang, Michael O’Loughlin, Albert Burk, Dave Grider, and Charles Scozzie, “Strategic Overview of High-Voltage SiC Power Device Development Aiming at Global Energy Savings,” Materials Science Forum, Vols. 778-780, pp. 1089-1095, 2014
• Woongje Sung, E. V. Brunt, B. J. Baliga, and Alex Q. Huang, "A Comparative Study of Gate Structures for 9.4-kV 4H-SiC Normally On Vertical JFETs," IEEE Transaction on Electron Devices, vol.59, no.9, pp.2417-2423, Sept. 2012;
• Woongje Sung, E. V. Brunt, B. J. Baliga, and Alex Q. Huang, "A New Edge Termination Technique for High-Voltage Devices in 4H-SiC – Multiple-Floating-Zone Junction Termination Extension," Electron Device Letters, IEEE , vol.32, no.7, pp.880-882, July 2011;
• Woongje Sung, B. J. Baliga, and A. Q. Huang, “A Novel 4H-SiC Fault Isolation Device with Improved Trade-off between On-state Voltage Drop and Short Circuit SOA,” Materials Science Forum, Vols. 717-720, pp. 1045-1048,2012;
• Woongje Sung, A. Q. Huang, and B. J. Baliga, “A novel 4H-SiC IGBT structure with improved trade-off between short circuit capability and on-state voltage drop,” Proceedings of ISPSD 2010, pp. 217-220, 6-10, June, 2010;
• Woongje Sung, Jun Wang, A. Q. Huang, and B. J. Baliga, “Design and investigation of frequency capability of 15kV 4H-SiC IGBT,” Proceedings of ISPSD 2009, pp. 271-274, 14-18, June, 2009;
• Jun Wang, A. Q. Huang, Woongje Sung, Yu, Liu, B. J. Baliga, “Development of 15kV SiC IGBTs and Their Impact to Utility Application,” IEEE Industrial Electronics Magazine, March 2009;

Issued patents

• 7018899 Methods of Fabricating Lateral Double-Diffused Metal Oxide Semiconductor Devices, Woongje Sung, Mar. 28, 2006
• 7247507, Methods for Forming LOCOS Layer in Semiconductor Device, Woongje Sung, Jul. 24, 2007
• 7329584, Method for manufacturing bipolar transistor, Woongje Sung, Feb. 12, 2008 
• 7482238, Methods for Manufacturing Semiconductor Device, Woongje Sung, Jan. 27, 2009
• 7446013, Method of measuring pattern shift in semiconductor device, Woongje Sung, Nov. 4, 2008
• 7439147, Resistor of Semiconductor device and method for fabricating the same, Woongje Sung, Oct. 21, 2008
• 7442617, Method for manufacturing bipolar transistor, Woongje Sung, Oct. 28, 2008
• 7595535, Resistor of Semiconductor device and method for fabricating the same, Woongje Sung, Sep. 29, 2009
• 7674681, Semiconductor device and method for manufacturing the same, Woongje Sung, Mar. 9, 2010
• 7727851, Method of measuring shifted epitaxy layer by buried layer, Woongje Sung, Jun. 1, 2010
• 9129835, Semiconductor device and method for manufacturing then same, Woongje Sung, Chang-yong Um, Jai-kwang Shin, Sep. 8, 2015
• 9053964, Semiconductor devices including a first and second HFET and methods of manufacturing the same, Woo-cheol Jeon, Woongje Sung, Jai-kwang Shin, Jae-joon Oh, Jun. 9, 2015

Grants

• U.S. Army Research Laboratory Grant to Manufacture Ultra-High Voltage Power Electronics Chips for Next-Gen Military and Commercial Applications ($2+ million) View News Release