ACS Nano publishes SUNY Poly collaborative research: Fermi Level Manipulation through Native Doping in the Topological Insulator Bi2Se3
ACS Nano
Abstract
"The topologically protected surface states of three-dimensional (3D) topological insulators have the potential to be transformative for high-performance logic and memory devices by exploiting their specific properties such as spin-polarized current transport and defect tolerance due to suppressed backscattering..."
Read More