Center for Advanced Semiconductor Power Electronics Research (CASPER) aims to advance power electronics based on wide bandgap materials such as SiC, GaN, and Ga2O3. CASPER has assembled a strong team encompassing material growth, device design, fabrication, packaging, and characterization. Particularly, CASPER has been conducting pioneering research in the field of SiC power device, III-nitride material growth/characterization, and high voltage packaging and characterization.