WSung@sunypoly.edu
![Woongje Sung](/sites/default/files/inline-images/sung.jpg)
SShahedipour-Sandvik@sunypoly.edu
![Shadi Shahedipour-Sandvik](/sites/default/files/Research/CASPER/Shadi.png)
NYun@sunypoly.edu
![Nick Yun](/sites/default/files/Research/CASPER/nick-yun.jpg)
JLynch@sunypoly.edu
![Justin Lynch](/sites/default/files/Research/Faculty%20Research%20Websites/Sung/justin-lynch.png)
Nanoscale Science and Engineering at the University of Albany in May of 2018. Justin joined the team of Dr. Woongje Sung’s research group in 2017, and has spent his time since then studying and fabricating various SiC Power Devices. He is currently involved in…
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Development of SiC JFETs
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Development and investigations of various ion implantation technics on SiC power device performance
SIsukapati@sunypoly.edu
![Sundar Babu Isukapati](/sites/default/files/Research/Faculty%20Research%20Websites/Sung/sundar-babu-isukapati.png)
He is currently involved in…
- SMART SiC Power ICs for Arpa-E
DKim@sunypoly.edu
![Dongyoung Kim](/sites/default/files/Research/Faculty%20Research%20Websites/Sung/dongyoung-kim.png)
He is currently involved in development of 1.2 kV and 12kV 4H-SiC MOSFETs, JBS diodes, and JBS diode integrated MOSFETs (JBSFETs). From these projects, he designs different voltage rating devices, and device fabrication process to make them.
SMancini@sunypoly.edu
![Stephen A. Mancini](/sites/default/files/Research/Faculty%20Research%20Websites/Sung/stephen-mancini.png)
Current Projects involved in…
- Improving SiC Wafers and Processing for Lower Costs and Higher Reliability.
![Skylar DeBoar](/sites/default/files/Research/CASPER/Skylar-Deboar.jpg)
Projects he is currently involved in include:
- Improving the performance and ruggedness of 1.2KV SiC MOSFETS
- Investigating new wide bandgap materials, such as Gallium Oxide, that could be used for power electronic devices
AMorgan@sunypoly.edu
![Adam Morgan](/sites/default/files/Research/Faculty%20Research%20Websites/Sung/adam-morgan.png)
He is currently involved in…
- WBG power semiconductor device research via high temperature (150 oC to 300 oC) and high voltage (600 V to 25 kV) power packaging and power electronics testing.
![Kasey Hogan](/sites/default/files/Research/CASPER/Seung-Yup-Jang.jpg)
- Improving SiC Wafers and Processing for Lower Costs and Higher Reliability.
- Development of 1.2 kV 4H-SiC MOSFETs, JBS diodes, and JBS diode integrated MOSFETs (JBSFETs)
- Development of SiC CMOS integrated circuits for high temperature operation
KHogan@sunypoly.edu
![Kasey Hogan](/sites/default/files/Research/CASPER/kasey-hogan.png)
ERocco@sunypoly.edu
![Emma Rocco](/sites/default/files/Research/CASPER/emma-rocco.png)
- MOCVD growth
- Electrical and structural characterization of materials and devices
- Device design through polarization engineering
- Optimization and modification of surfaces and interfaces
VMeyers@sunypoly.edu
![Vincent Meyers](/sites/default/files/Research/CASPER/vincent-meyers.png)
- Design, fabrication, testing and characterization of 2-DEG High Electron Mobility Transistors (HEMT) devices.
- Wide band gap semiconductor physics
- Photoconductive semiconductor switching
- Nonlinear optics of semiconductors
BMcEwen@sunypoly.edu
![Ben McEwen](/sites/default/files/Research/CASPER/ben-mcewen.png)
- MOCVD growth
- Design, fabrication, testing and characterization of AlGaN/GaN High Electron Mobility Transistors (HEMT) and MISHEMT devices.
- Doping in GaN
PNair@sunypoly.edu
![Prabha Nair](/sites/default/files/Research/CASPER/prabha-nair.png)
- VLSI Design
- TCAD simulation of III-V-based devices
- Fundamental device physics