People

WOONGJE SUNG

Associate Professor, College of Nanoscale Science and Engineering, Principal Investigator; CASPER Director
WSung@sunypoly.edu

Woongje Sung received his B.S. and M.S. degrees in electrical engineering from Korea University in 2000, and 2002 respectively. He received his ph. D. in electrical and computer engineering from North Carolina State University in 2011. He has experience in a number of industrial settings including a startup company, a semiconductor foundry (Dongbu Hitek), and a mature multi-national company (Samsung Advanced Institute of Technology). He is a founding member of DOE funded PowerAmerica Institute, where he has been contributing to establish the baseline process of SiC MOSFETs and diodes. In 2016, He has joined State University of New York Polytechnic Institute (SUNY Poly), CNSE (Colleges of Nanoscale Science and Engineering), as an Associate Professor.

F. (SHADI) SHAHEDIPOUR-SANDVIK

Professor, Colleges of Nanoscale Science and Engineering; CASPER Deputy Director
SShahedipour-Sandvik@sunypoly.edu

F. (Shadi) Shahedipour-Sandvik received the BSc degree in physics from University of Tehran-Iran and the PhD degree in experimental solid-state physics with an emphasis in materials physics from University of Missouri-Columbia in 1992, and 1998, respectively. From 1998 to 2001, she held a postdoctoral and Research Associate positions in the Departments of Materials Science and Engineering, and Electrical Engineering at Northwestern University, respectively. There, in collaboration with Hamamatsu, she was the first to report a fully packaged GaN-based photocathode detector for solar-blind applications. In 2001, she joined the College of Nanoscale Science and Engineering at SUNY Polytechnic Institute, where she is currently a Professor of Nanoscale Engineering. Her research is focused on U/Wide bandgap materials and devices based on them.

NICK (NUNG JUN) YUN

Graduate Student (Fall 2017 ~)
NYun@sunypoly.edu

Nick Yun received his B.S. degree in nanoscale engineering from the State University of New York at Albany (SUNY-Albany) – College of Nanoscale Science and Engineering (CNSE), in 2017. He is currently pursing the Ph.D. degree in nanoscale engineering from SUNY Polytechnic Institute, under the guidance of Dr. Woongje Sung. He has a background research of synthesis and optical characterization of 3C-SiC nanowires and 2D nano-materials. During his time here, he has designed and fabricated 600V to 13kV 4H-SiC MOSFETs, diodes, JBS diode integrated MOSFETs (JBSFETs), and GaN PiN diodes. His major focus is development and manufacturing of ultra-high-voltage SiC MOSFETs, diodes, and JBSFETs (voltage rating: 12-15kV).

JUSTIN LYNCH

Undergrad Student (Fall 2018 ~ )
JLynch@sunypoly.edu

Justin Lynch is currently a second year graduate student at SUNY Polytechnic Institute, pursuing a Ph.D. in Nanoscale Engineering. He is from Hoosick Falls, New York and received his bachelors degree in Nanoscale Engineering from the Colleges of
Nanoscale Science and Engineering at the University of Albany in May of 2018. Justin joined the team of Dr. Woongje Sung’s research group in 2017, and has spent his time since then studying and fabricating various SiC Power Devices. He is currently involved in…

Development of SiC JFETs
Development and investigations of various ion implantation technics on SiC power device performance

SUNDAR BABU ISUKAPATI

Graduate Student (Spring 2019 ~)
SIsukapati@sunypoly.edu

Sundar Isukapati received his M.S. degree in electrical engineering in Youngstown State University. He is a second year graduate student, pursing his Ph.D. in nanoscale engineering from SUNY Polytechnic Institute. He has a background research of fabrication, electrical and optical characterization of -Ga2O3 thin films. As of now, his interests are to develop scalable, manufacturable, and robust technology for SiC power integrated circuits.
He is currently involved in…

SMART SiC Power ICs for Arpa-E

From this project, he has learnt to understand the CMOS technology, fabrication process of each device, and to design and simulate the devices based on their voltage ratings.

DONGYOUNG KIM

Graduate Student (Spring 2019 ~)
DKim@sunypoly.edu

Dongyoung Kim received his B.S. and M.S degrees in semiconductor engineering from Gyeongsang National University (South Korea) in 2016 and 2018, respectively. He is a second year graduate student, pursing his Ph.D. in nanoscale engineering from SUNY Polytechnic Institute. He has a background research of design and fabrication of 4H-SiC MOSFETs and trench diodes. As of now, his interests are designing and fabricating energy efficient devices utilizing wide-bandgap materials.
He is currently involved in development of 1.2 kV and 12kV 4H-SiC MOSFETs, JBS diodes, and JBS diode integrated MOSFETs (JBSFETs). From these projects, he designs different voltage rating devices, and device fabrication process to make them.

STEPHEN A. MANCINI

Graduate Student (Spring 2020 ~)
SMancini@sunypoly.edu

Stephen A. Mancini received his B.S. degree in nanoscale engineering at SUNY Polytechnic Institute College of Nanoscale Science and Engineering (CNSE). Steve is a first year graduate student, pursuing his Ph.D. in nanoscale engineering from SUNY Polytechnic Institute. Background industry and research includes TCAD modeling of stress and its impacts on wafer warpage, and 3D NAND device modeling. He is now looking to further his understanding and interests in the design and fabrication of SiC power devices.
Current Projects involved in…

Improving SiC Wafers and Processing for Lower Costs and Higher Reliability.

SKYLAR DEBOAR

Graduate Student (Fall 2020 ~)

Skylar DeBoer received his B.S. degree in nanoscale engineering at SUNY Polytechnic Institute College of Nanoscale Science and Engineering (CNSE). Skylar is a second year graduate student, pursuing his Ph.D. in nanoscale engineering from SUNY Polytechnic Institute. He has experience in MOSFET device characterization, SEM analysis, and device process modeling in TCAD.

Projects he is currently involved in include:

Improving the performance and ruggedness of 1.2KV SiC MOSFETS
Investigating new wide bandgap materials, such as Gallium Oxide, that could be used for power electronic devices

ADAM J MORGAN, Ph.D.

Postdoctoral Research Scientist (Fall 2019 ~)
AMorgan@sunypoly.edu

Dr. Adam J Morgan received his Ph.D. in Electrical Engineering at North Carolina State University where he was a graduate research assistant within the Future Renewable Electric Energy Delivery and Management (FREEDM) Systems Center, PowerAmerica, and the Packaging Research in Electronic Energy Systems (PREES) Laboratory. He has experience in Level-1 power discrete and power module packaging for hybrid Si&SiC motor contactors and super cascode topologies, as well as Level-2 and Level-3 power packaging for a 55 kW traction drive SiC inverter and a 1 kW self-oscillating resonant LLC converter switching 1 kV at 1 MHz.
He is currently involved in…

WBG power semiconductor device research via high temperature (150 oC to 300 oC) and high voltage (600 V to 25 kV) power packaging and power electronics testing.

SEUNG YUP JANG

Postdoctoral Research Scientist (Spring 2021 ~)

Dr. Seung Yup Jang received his B.S. and Ph.D. degrees in physics from Seoul National University in 2004, and 2010 respectively. In 2010, he joined LG Electronics as a wide bandgap device engineer where he developed 650V normally-off GaN HEMT and 1200V SiC Power devices. His major contributions were device design, characterization, and application testing. From 2017 to 2019, he led the development of 1200V SiC power devices as the leader of the SiC development project. His main interest is development and application of frontier technology for wide bandgap devices. He is currently involved in:

Improving SiC Wafers and Processing for Lower Costs and Higher Reliability.
Development of 1.2 kV 4H-SiC MOSFETs, JBS diodes, and JBS diode integrated MOSFETs (JBSFETs)
Development of SiC CMOS integrated circuits for high temperature operation

KASEY HOGAN

Graduate Student (Fall 2015 ~)
KHogan@sunypoly.edu

Kasey Hogan obtained his B.S. in Physics with a minor in Mathematics from The College at Brockport: SUNY in 2015. He went on to complete a M.S in Nanoscale Science at the University at Albany in 2017. He joined SUNY Poly in Fall 2015 to obtain a PhD in Nanoscale Engineering. Experience has been gained in operating and maintaining an MOCVD growth system, fabricating and characterizing III-Nitride devices, and with TCAD physics-based device simulations. Hobbies include sports, playing guitar, and attending concerts. Research interests include MOCVD growth of III-Nitride materials GaN-based betavoltaic device development Novel techniques for increased activation efficiency of p-type dopants in GaN

EMMA ROCCO

Graduate Student (Fall 2016 ~)
ERocco@sunypoly.edu

Emma Rocco: Hailing from Saratoga Springs, NY, I graduated from Smith College with a BS in Engineering Science and a minor in physics in 2016. During my time at Smith I gained experience through internships at the City of Cohoes, SUNY Polytechnic Institute CNSE, and Schneider Electric. Following graduation from Smith, I joined SUNY Poly in the summer of 2016 to pursue a PhD in Nanoscale Engineering. I am passionate about engineering education, and specifically increasing representation of minorities within engineering. Additionally, I have a strong interest in environmental ethics and the impact the semiconductor industry has on the environment. In my free time I enjoy taking ballet class, medieval languages, and strong coffee. Research interests include:

MOCVD growth
Electrical and structural characterization of materials and devices
Device design through polarization engineering
Optimization and modification of surfaces and interfaces

VINCENT MEYERS

Graduate Student (Fall 2017 ~)
VMeyers@sunypoly.edu

Vincent Meyers: I have a BS/BA double in Physics and Government from Houston Baptist University, where my capstone project focused on simulation of Planck-length dependence of quantum well depth. I obtained my MS in Electrical Engineering in 2016, where my thesis research focused on measuring and modelling nonlinear optical absorption in GaN and SiC at below- and above-band gap optical energies. Additional post-master's research focused on the development of a pulse-charged, high-gain semi-insulating GaN photoconductive switch. My research covers defect evolution of Mg-doped GaN in response to microwave annealing. Research interests include:

Design, fabrication, testing and characterization of 2-DEG High Electron Mobility Transistors (HEMT) devices.
Wide band gap semiconductor physics
Photoconductive semiconductor switching
Nonlinear optics of semiconductors

BEN MCEWEN

Graduate Student (Fall 2018 ~)
BMcEwen@sunypoly.edu

Ben McEwen received a BS in Materials Science and Engineering from Cornell University in 2017. During his time as an undergraduate, he studied the effects of epitaxial strain on tunable dielectric materials. Since joining SUNY Poly in spring of 2018, he has been working on the design, fabrication, and characterization of MIS and MIS-HEMT devices, as well as the development of p-type doping using beryllium. Research interests include:

MOCVD growth
Design, fabrication, testing and characterization of AlGaN/GaN High Electron Mobility Transistors (HEMT) and MISHEMT devices.
Doping in GaN

PRABHA NAIR

Graduate Student (Fall 2019 ~)
PNair@sunypoly.edu

Prabha Nair: I have done my Master’s in Electronics and Communication Engineering with a specialization in VLSI Design from Karunya University, India and Bachelor’s in Electronics and Communication Engineering from Mahatma Gandhi University, India. As a part of my master’s research, I have worked on the Design and Simulation of Gate Recessed GaN/AlGaN HEMT and studied the DC and RF performance of the device for RF Applications. After that, I have also worked on the design and simulation of Triple Gate finFets and Drain Extended Triple Gate finFETs using different high-K dielectrics and also on 2D materials such as WS2.Research interests include:

VLSI Design
TCAD simulation of III-V-based devices
Fundamental device physics

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