 |
 |
 |
Project Description
- Design and implement next-generation AlGaN/GaN power HEMT devices, including dynamic control of threshold voltage with pGaN body diode and improved reliability with homoepitaxial HEMTs
- Optimize metal-insulator-semiconductor (MIS) gate structures to enable high-performance, low leakage, and normally-on operation
Research Highlight
- HEMT with pGaN body diode successfully implemented; Ioff, and threshold voltage control demonstrated
- Successful and controlled homo/epitaxial GaN device with low defect density and low background impurity incorporation by MOCVD
- Fabricated MIS-gate HEMTs have shown reduced gate leakage by several orders of magnitude relative to Schottky gate
 |
 |
| 3D view and side view of AlGaN/GaN HEMT with the implementation of back gate contact1 | Shift in threshold voltage (VTH) with the application of back-gate voltage |
1I. Mahaboob, et al., "Dynamic Control of AlGaN/GaN HEMT Characteristics by Implementation of a p-GaN Body-Diode-Based Back-Gate," in IEEE Journal of the Electron Devices Society, vol. 7, pp. 581-588, 2019.
