FEOL Wets Processes

  • HFEG
  • Dilute SC1 / SC2. RT and hot (60C)
  • Concentrated SC1 @RT and hot
  • Hot Phosphoric
  • Dilute Nitric
  • HF (300:1 DHF/100:1 DHF/10:1 DHF. Etch rate, respectively: 7/28/600 A/min)
  • Ozone/HCl
  • Piranha
  • Backside Clean (SC1 or SC2 or dilute nitric followed by DHF)
  • Brush Clean
  • 40:1 BHF
  • Aqua Regia
  • HF-Last
  • Hot Ammonia for a-Si etch

TEMPLE ETCH

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