Papers
Nick Yun, Woongje Sung et al, “On the development of 1700V SiC JBS diodes in a 6-inch foundry,” accepted for a presentation, European Conferences on Silicon Carbide and Related Materials (ECSCRM), 2018
Kijeong Han, B. J. Baliga, and Woongje Sung “Accumulation channel vs. Inversion channel 1.2kV rated 4H-SiC Buffered-Gate (BG) MOSFETs: Analysis and Experimental Results,” Proceedings of ISPSD, 2018.
Woongje Sung, Kijeong Han, and B. J. Baliga, “Optimization of the JFET region of 1.2kV SiC MOSFETs for improved high frequency figure of merit (HF-FOM),” Proceeding of Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 2017.
Woongje Sung, Kijeong Han, and B. J. Baliga, “Design and Manufacturing of 1200V SiC JBS Diodes with Low On-state Voltage Drop and Reverse Blocking Leakage Current,” Proceeding of International Conferences on Silicon Carbide and Related Materials (ICSCRM), 2017
B. J. Baliga, Woongje Sung, Kijeong Han, Jeffrey Harmon, Austin Tucker, Saimum Syed, “PRESiCE: Process Engineered for manufacturing SiC Electronic-devices,” Proceeding of International Conferences on Silicon Carbide and Related Materials (ICSCRM), 2017
Kijeong Han, B. J. Baliga, and Woongje Sung, “1.2kV Split-Gate MOSFET: Analysis and Experimental Results,” Proceeding of International Conferences on Silicon Carbide and Related Materials (ICSCRM), 2017
Kijeong Han, B. J. Baliga, and Woongje Sung, “Split-Gate 1.2kV 4H-SiC MOSFET: Analysis and Experimental Validation,” IEEE Electron Device Lett., vol. 38, no. 10, pp. 1437-1440, Oct. 2017. DOI: 10.1109/LED.2017.2738616
Nick Yun, Woongje Sung et al, “On the development of 1700V SiC JBS diodes in a 6-inch foundry,” accepted for a presentation, European Conferences on Silicon Carbide and Related Materials (ECSCRM), 2018
Kijeong Han, B. J. Baliga, and Woongje Sung “Accumulation channel vs. Inversion channel 1.2kV rated 4H-SiC Buffered-Gate (BG) MOSFETs: Analysis and Experimental Results,” Proceedings of ISPSD, 2018.
Woongje Sung, Kijeong Han, and B. J. Baliga, “Optimization of the JFET region of 1.2kV SiC MOSFETs for improved high frequency figure of merit (HF-FOM),” Proceeding of Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 2017.
Woongje Sung, Kijeong Han, and B. J. Baliga, “Design and Manufacturing of 1200V SiC JBS Diodes with Low On-state Voltage Drop and Reverse Blocking Leakage Current,” Proceeding of International Conferences on Silicon Carbide and Related Materials (ICSCRM), 2017
B. J. Baliga, Woongje Sung, Kijeong Han, Jeffrey Harmon, Austin Tucker, Saimum Syed, “PRESiCE: Process Engineered for manufacturing SiC Electronic-devices,” Proceeding of International Conferences on Silicon Carbide and Related Materials (ICSCRM), 2017
Kijeong Han, B. J. Baliga, and Woongje Sung, “1.2kV Split-Gate MOSFET: Analysis and Experimental Results,” Proceeding of International Conferences on Silicon Carbide and Related Materials (ICSCRM), 2017
Kijeong Han, B. J. Baliga, and Woongje Sung, “Split-Gate 1.2kV 4H-SiC MOSFET: Analysis and Experimental Validation,” IEEE Electron Device Lett., vol. 38, no. 10, pp. 1437-1440, Oct. 2017. DOI: 10.1109/LED.2017.2738616
Yifan Jiang, Woongje Sung, Jayant Baliga, Sizhen Wang, Bongmook Lee, and A. Q. Huang, “Electrical Characteristics of 10kV 4H-SiC MPS Rectifiers with High Schottky Barrier Height,” Journal of Electronic Materials, 2017, DOI: https://doi.org/10.1007/s11664-017-5812-2
Woongje Sung, Kijeong Han, and B. J. Baliga, “A comparative study of channel designs for SiC MOSFETs: accumulation mode channel vs. inversion mode channel,” Proceedings of International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2017.
Woongje Sung and B. J. Baliga, "On Developing One-Chip Integration of 1.2 kV SiC MOSFET and JBS Diode (JBSFET)," IEEE Transaction on Industrial Electronics, vol.64, no.10, pp. 8206-8212, Oct. 2017; DOI: 10.1109/TIE.2017.2696515
Woongje Sung and B. J. Baliga, “Monolithically Integrated 4H-SiC MOSFET and JBS Diode (JBSFET) using a Single Ohmic/Schottky Process Scheme,’’ IEEE Electron Device Lett., vol. 37, no. 12, pp. 1605-1608, Dec. 2016. DOI: 10.1109/LED.2016.2618720
Woongje Sung and B. J. Baliga, “A Near Ideal Edge Termination Technique for 4500V 4H-SiC Devices: the Hybrid Junction Termination Extension (Hybrid-JTE),’’ IEEE Electron Device Lett., vol. 37, no.12, pp. 1609-1612, Dec. 2016. DOI: 10.1109/LED.2016.2623423
Woongje Sung and B. J. Baliga, “Design and Fabrication of 1400V 4H-SiC Accumulation Mode MOSFETs (ACCUFETs),” proceeding of 11th European Conference on Silicon Carbide and Related Materials, Sep. 25-29, Halkidiki, Greece, 2016
Woongje Sung, B. J. Baliga, and Alex Q. Huang, "Area-Efficient Bevel-Edge Termination Techniques for SiC High-Voltage Devices," IEEE Transaction on Electron Devices, vol.63, no.4, pp.1630-1636, Apr. 2016.
Siyang Liu, Yifan Jiang, Woongje Sung, Xiao Qing Song, B. J. Baliga, Wei Feng Sung, and Alex Q. Huang, “Understanding High Temperature Static and Dynamic Characteristics of 1.2kV SiC Power MOSFETs,” Material Science Forum, Vol. 897, pp. 501-504, 2017
Yifan Jiang, Woongje Sung, Xiaoqing Song, Haotao Ke, Siyang Liu, B. J. Baliga, A. Q. Huang, and Edward Van Brunt, “10kV SiC MPS diodes for high temperature applications,” Proceedings of International Symposium on Power Semiconductor Devices and ICs (ISPSD), pp. 43-46, 12-16, June, 2016
Anant Agarwal, Woongje Sung, Laura Marlino, Pawel Gradzki, John Muth, Robert Ivester, and Nick Justice, “Wide Band Gap Semiconductor Technology for Energy Efficiency,” Materials Science Forum, Vols. 858, pp. 797-802,2016;
Woongje Sung, and B. J. Baliga, “Design and Economic Considerations to Achieve the Price Parity of SiC MOSFETs with Silicon IGBTs,” Materials Science Forum, Vols. 858, pp. 889-893,2016;
Woongje Sung, Alex Q. Huang, and B. J. Baliga, “Bevel Junction Termination Extension (Bevel-JTE) – A New Edge Termination Technique for 4H-SiC High Voltage Devices,” Electron Device Letters, IEEE , vol.36, no.6, pp.594-596, June 2015;
Lin Liang, Alex Q. Huang, Woongje Sung, Meng-Chia Lee, Xiaoqing Song, Chang Peng, Lin Cheng, John Palmour, Charles Scozzie, “Turn-on Capability of 22kV SiC Emitter Turn-Off (ETO) Thyristor,” Proceeding of Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 2015.
Woongje Sung, Alex Q. Huang, B. J. Baliga, Inhwan Ji, Haotao Ke, Douglas C. Hopkins, “The First Demonstration of Symmetric Blocking SiC P-type Gate Turn-Off (GTO) Thyristor,” Proceedings of ISPSD 2015, pp. 257-260, 10-14, May, 2015
Lin Cheng, John W. Palmour, Anant K. Agarwal, Scott T. Allen, Edward V. Brunt, Gangyao Wang, Vipindas Pala, Woongje Sung, Alex Q. Huang, Michael O’Loughlin, Albert Burk, Dave Grider, and Charles Scozzie, “Strategic Overview of High-Voltage SiC Power Device Development Aiming at Global Energy Savings,” Materials Science Forum, Vols. 778-780, pp. 1089-1095, 2014
Woongje Sung, E. V. Brunt, B. J. Baliga, and Alex Q. Huang, "A Comparative Study of Gate Structures for 9.4-kV 4H-SiC Normally On Vertical JFETs," IEEE Transaction on Electron Devices, vol.59, no.9, pp.2417-2423, Sept. 2012;
Woongje Sung, E. V. Brunt, B. J. Baliga, and Alex Q. Huang, "A New Edge Termination Technique for High-Voltage Devices in 4H-SiC – Multiple-Floating-Zone Junction Termination Extension," Electron Device Letters, IEEE , vol.32, no.7, pp.880-882, July 2011;
Woongje Sung, B. J. Baliga, and A. Q. Huang, “A Novel 4H-SiC Fault Isolation Device with Improved Trade-off between On-state Voltage Drop and Short Circuit SOA,” Materials Science Forum, Vols. 717-720, pp. 1045-1048,2012;
Woongje Sung, A. Q. Huang, and B. J. Baliga, “A novel 4H-SiC IGBT structure with improved trade-off between short circuit capability and on-state voltage drop,” Proceedings of ISPSD 2010, pp. 217-220, 6-10, June, 2010;
Woongje Sung, Jun Wang, A. Q. Huang, and B. J. Baliga, “Design and investigation of frequency capability of 15kV 4H-SiC IGBT,” Proceedings of ISPSD 2009, pp. 271-274, 14-18, June, 2009;
Jun Wang, A. Q. Huang, Woongje Sung, Yu, Liu, B. J. Baliga, “Development of 15kV SiC IGBTs and Their Impact to Utility Application,” IEEE Industrial Electronics Magazine, March 2009;
Woo Beom Choi, Woongje Sung, Chun Il Park, Sangsig Kim, Man Young Sung, “New lateral insulated-gate bipolar transistor on silicon-on-insulator,” Journal of the Korean Physical Society, Vol. 40, Issue 4, pp. 645-648, 2002;
Man Young Sung, Woongje Sung, Yong Il Lee, Chun Il Park, Woo Beom Choi, Sangsig Kim, “Effect of excimer laser annealing on optical properties of GaN films deposited by RF magnetron sputtering,” Materials Research Society Symposium - Proceedings, Vol. 693, pp. 61-66, 2002;
Woo Beom Choi, Woongje Sung, Yong Il Lee, Man Young Sung, “A new silicon-on-insulator lateral insulated-gate bipolar transistor with dual channel structure,” Japanese journal of applied physics, Vol. 40, Issue 12R, p. 6683, 2001;
Woo Beom Choi, Woongje Sung, Yong Il Lee, Man Young Sung, “Dual channel SOI LIGBT with improved latch-up and forward voltage drop characteristics,” Device Research Conference 2001, pp. 53-54;
Woongje Sung, Yong Il Lee, Woo Beom Choi, Man Young Sung, “A New SOI LIGBT Structure with Improved Latch-up Performance,” Transaction on Electrical and Electronic Materials Vol.2, Issue 4, 2001, pp. 30-32;
Patents
7018899 Methods of Fabricating Lateral Double-Diffused Metal Oxide Semiconductor Devices, Woongje Sung, Mar. 28, 2006
7247507, Methods for Forming LOCOS Layer in Semiconductor Device, Woongje Sung, Jul. 24, 2007
7329584, Method for manufacturing bipolar transistor, Woongje Sung, Feb. 12, 2008
7482238, Methods for Manufacturing Semiconductor Device, Woongje Sung, Jan. 27, 2009
7446013, Method of measuring pattern shift in semiconductor device, Woongje Sung, Nov. 4, 2008
7439147, Resistor of Semiconductor device and method for fabricating the same, Woongje Sung, Oct. 21, 2008
7442617, Method for manufacturing bipolar transistor, Woongje Sung, Oct. 28, 2008
7595535, Resistor of Semiconductor device and method for fabricating the same, Woongje Sung, Sep. 29, 2009
7674681, Semiconductor device and method for manufacturing the same, Woongje Sung, Mar. 9, 2010
7727851, Method of measuring shifted epitaxy layer by buried layer, Woongje Sung, Jun. 1, 2010
9129835, Semiconductor device and method for manufacturing then same, Woongje Sung, Chang-yong Um, Jai-kwang Shin, Sep. 8, 2015
9053964, Semiconductor devices including a first and second HFET and methods of manufacturing the same, Woo-cheol Jeon, Woongje Sung, Jai-kwang Shin, Jae-joon Oh, Jun. 9, 2015
