BOOKS
Compound Semiconductor Materials and Devices
Proceeding of Materaials Research Society, volume 1635, 2014
Editors: F. Shahedipour-Sandvik, L. D. Bell, K. A. Jones, A. Clark, K. Ohmori
Special Issue, Journal of Electronic Materials
Volume 42, Issue 5, 2013
Editors: J. Caldwell, R. Goldman, J. Phillips, O. Jurchescu, S. Shahedipour-Sandvik, A. Salleo, G. Xing, and J. Xu
Compound Semiconductors for Energy Applications and Environmental Sustainability
Proceeding of Materials Research Society, volume 1324, 2011
Editors: F. Shahedipour-Sandvik, L.D. Bell, K. Jones, B. Simpkins, D. Schaadt, M. Contreras
Compound Semiconductors for Energy Applications and Environmental Sustainability
Proceeding of Materials Research Society, volume 1167, 2009
Editors: F. Shahedipour-Sandvik, E. Fred Schubert, L. Douglas Bell, Vinayak Tilak, Andreas W. Bett
Solid State Lighting Materials and Devices
Proceeding of Materials Research Society, volume 189, 2006
Editors: F. Shahedipour-Sandvik, E. Fred Schubert, B. Crone, H. Li, Y._K. Yu
PATENTS
F. S. Shahedipour-Sandvik, V. Meyers, E. Rocco, K. Hogan, “Method for in-situ/in-line semiconductor electrical measurement monitoring”, provisional July 2020
Methods of performance enhancement of solid-state devices by wafer level isolation of mismatched components.
F. Shahedipour-Sandvik, P. Suvarna
Invention disclosure, submitted (2014).
Method of achieving negative electron affinity in III-Nitride photocathodes by polarization field engineering.
F. Shahedipour-Sandvik, J. Marini
Invention disclosure, submitted (2013).
Method of creating Cs-free III-Nitride based Photocathodes
F. Shahedipour-Sandvik, N. Tripathi
Invention disclosure, submitted (2009).
Bandgap Engineering in Mono- and Multi-layer Graphene via Formation of Interface Charges
F. Shahedipour-Sandvik, N. Tripathi
Disclosure letter, Submitted (2009).
Growth of Highly Dislocation Free AlInGaN on Lattice-Mismatched Si Substrates
F. Shahedipour-Sandvik, D. Wu, M. Jamil
International publication # WO04109775A2, US Patent-accepted for issuance (2014).
JOURNAL ARTICLES
The Effect of Annealing on Photoluminescence from Defects in Ammonothermal GaN
M. A. Reshchikov, D. O. Demchenko, D. Ye, O. Andrieiev, M. Vorobiov, K. Grabianska, M. Zajac, P. Nita, M. Iwinska, M. Bockowski, B. McEwen, and F. Shahedipour-Sandvik
Journal of Applied Physics, 131, 035704, 2022
Overview and Progress Toward High-Efficiency, Air Stable, Cs-Free III-Nitride Photocathode Detectors
E. Rocco, J. Marini, K. Hogan, V. Meyers, B. McEwen, L. D. Bell, and F. Shahedipour-Sandvik
IEEE Photonics J., 14, 1–12, 2022
X-Ray Topography Characterization of Gallium Nitride Substrates for Power Device Development
B. Raghothamachar, Y. Liu, H. Peng, T. Ailihumaer, M. Dudley, F. S. Shahedipour-Sandvik, K. A. Jones, A. Armstrong, A. A. Allerman, J. Han, H. Fu, K. Fu, and Y. Zhao
Journal of Crystal Growth, 544, 125709, 2020
P-Type Conductivity and Damage Recovery in Implanted GaN Annealed by Rapid Gyrotron Microwave Annealing
V. Meyers, E. Rocco, T. J. Anderson, J. C. Gallagher, M. A. Ebrish, K. Jones, M. Derenge, M. Shevelev, V. Sklyar, K. Hogan, B. McEwen, and F. Shahedipour-Sandvik
Journal of Applied Physics, 128, 085701, 2020
Investigation of the Electrical Behavior of AlGaN/GaN High Electron Mobility Transistors Grown with Underlying GaN:Mg Layer
I. Mahaboob, S. W. Novak, E. Rocco, K. Hogan, and F. Shahedipour-Sandvik
Journal of Vacuum Science and Technology. B, 38, 062204, 2020
Synchrotron X-Ray Topography Characterization of High Quality Ammonothermal-Grown Gallium Nitride Substrates
Y. Liu, B. Raghothamachar, H. Peng, T. Ailihumaer, M. Dudley, R. Collazo, J. Tweedie, Z. Sitar, F. Shadi Shahedipour-Sandvik, K. A. Jones, A. Armstrong, A. A. Allerman, K. Grabianska, R. Kucharski, and M. Bockowski
Journal of Crystal Growth, 551, 125903, 2020
Drain-Voltage-Induced Secondary Effects in AlGaN/GaN HEMTs With Integrated Body-Diode
I. Mahaboob, M. Yakimov, E. Rocco, K. Hogan, and F. Shahedipour-Sandvik
IEEE Trans. Electron Devices, 67, 3983–3987, 2020
Removal of Dry-Etch-Induced Surface Layer Damage from p-GaN by Photoelectrochemical Etching
V. Meyers, E. Rocco, K. Hogan, S. Tozier, B. McEwen, I. Mahaboob, and F. Shahedipour-Sandvik
Journal of Electronic Materials, 49, 3481–3489, 2020
Hillock Assisted P-Type Enhancement in N-Polar GaN:Mg Films Grown by MOCVD
E. Rocco, O. Licata, I. Mahaboob, K. Hogan, S. Tozier, V. Meyers, B. McEwen, S. Novak, B. Mazumder, M. Reshchikov, L. Douglas Bell, and F. Shahedipour-Sandvik
Sci. Rep., 10, 1426, 2020
In Operando Investigation of GaN PIN Device Characteristics under Electron Irradiation Energies Comparable to Pm-147 Source for Betavoltaic Application
K. Hogan, M. Rodriguez, E. Rocco, V. Meyers, B. McEwen, and F. S. Shahedipour-Sandvik
AIP Advances, 10, 085110, 2020
Dynamic Control of AlGaN/GaN HEMT Characteristics by Implementation of a p-GaN Body-Diode-Based Back-Gate
I. Mahaboob, M. Yakimov, K. Hogan, E. Rocco, S. Tozier, and F. Shahedipour-Sandvik
IEEE J. Electron Devices Soc., 7, 581–588, 2019
3D GaN-Based Betavoltaic Device Design with High Energy Transfer Efficiency
K. Hogan, M. Litz, and F. Shahedipour-Sandvik
Appl. Radiat. Isot., 145, 154–160, 2019
P-Type Conductivity and Suppression of Green Luminescence in Mg/N Co-Implanted GaN by Gyrotron Microwave Annealing
V. Meyers, E. Rocco, K. Hogan, B. McEwen, M. Shevelev, V. Sklyar, K. Jones, M. Derenge, and F. Shahedipour-Sandvik
Journal of Applied Physics, 130, 085704, 2021
Dopant-Defect Interactions in Mg-Doped GaN via Atom Probe Tomography
O. G. Licata, S. Broderick, E. Rocco, F. Shahedipour-Sandvik, and B. Mazumder
Appl. Phys. Lett., 119, 032102, 2021
Stability of the C N H i Complex and the Blue Luminescence Band in GaN
M. A. Reshchikov, O. Andrieiev, M. Vorobiov, B. McEwen, S. Shahedipour-Sandvik, D. Ye, and D. O. Demchenko
Phys. status solidi, 258, 2100392, 2021
Photoemission Characterization of N-Polar III-Nitride Photocathodes as Bright Electron Beam Source for Accelerator Applications
L. Cultrera, E. Rocco, F. Shahedipour-Sandvik, L. D. Bell, J. K. Bae, I. V. Bazarov, P. Saha, S. Karkare, and A. Arjunan
Journal of Applied Physics, 2021
Investigation of the Effects of Forming Gas Annealing on Al2O3/GaN Interface
B. McEwen, I. Mahaboob, E. Rocco, K. Hogan, V. Meyers, R. Green, F. Nouketcha, T. Murray, V. Kaushik, A. Lelis, and F. Shahedipour-Sandvik
Journal of Electronic Materials, 50, 80–84, 2021
Boronate Probe-Based Hydrogen Peroxide Detection with AlGaN/GaN HEMT Sensor
I. Mahaboob, R. J. Reinertsen, B. McEwen, K. Hogan, E. Rocco, J. A. Melendez, N. C. Cady, and F. Shahedipour-Sandvik
Exp. Biol. Med., 246, 523–528, 2021
Impurity Incorporation and Diffusion from Regrowth Interfaces in N-Polar GaN Photocathodes and the Impact on Quantum Efficiency
E. Rocco, I. Mahaboob, K. Hogan, V. Meyers, B. McEwen, L. D. Bell, and F. Shahedipour-Sandvik
Journal of Applied Physics, 129, 195701, 2021
P-Type Conductivity and Suppression of Green Luminescence in Mg/N Co-Implanted GaN by Gyrotron Microwave Annealing
V. Meyers, E. Rocco, K. Hogan, B. McEwen, M. Shevelev, V. Sklyar, K. Jones, M. Derenge, and F. Shahedipour-Sandvik
Journal of Applied Physics, 130, 085704, 2021
Polarization Engineered N-polar Cs-free GaN Photocathodes
J. Marini; I. Mahaboob; L.D. Bell; F. Shahedipour-Sandvik
J. Applied Physics, 124, 113101, 2018
Mg Incorporation Efficiency in Pulsed MOCVD of N-polar GaN:Mg
J. Marini; I. Mahaboob; K. Hogan; S. Novak; L.D. Bell; F. Shahedipour-Sandvik
Journal of Electronic Materials (Submitted)
Selective area epitaxial growth of stretchable geometry AlGaN-GaN heterostructures
I. Mahaboob, J.Marini, K. Hogan, E.Rocco, F. Shahedipour-Sandvik, R. P. Tompkins, and N. Lazarus
J. Electronic Materials, 47, 6625, 2018
(Editor Pick) Monte Carlo simulation of III-nitride photocathodes
J. Marini; L.D. Bell; F. Shahedipour-Sandvik
Journal of Applied Physics 123, 124502, 2018
Influence of mask material on the electrical properties of selective area epitaxy GaN microstructures
I. Mahaboob, K. Hogan, S. W. Novak, F. Shahedipour-Sandvik, R. P. Tompkins, N. Lazarus
Journal of Vacuum Science and Technology. B, 36, May 2018
A-plane GaN epitaxial lateral overgrowth structures: growth domains, morphological defects, and impurity incorporation directly imaged by cathodoluminescence microscopy
K. Hogan, S. Metzner, F. Bertram, I. Mahaboob, E. Rocco, F. Shahedipour-Sandvik, A. Dempewolf, J. Christen
Proc. SPIE 10532, Gallium Nitride Materials and Devices XIII, 105320V, 2018
Design and characterization of GaN p-i-n diodes for betavoltaic devices
Muhammad R.Khan, Joshua R.Smith, Randy P. Tompkins, Stephen Kelley, Marc Litz, John Russo, Jeff Leathersich, Fatemeh (Shadi) Shahedipour-Sandvik, Kenneth A.Jones, Agis Iliadis
Solid-State Electronics, 136, 24-29 (2017)
Electrical properties of AlGaN/GaN HEMTs in stretchable geometries
R. P. Tompkins, I. Mahaboob, S. Shahedipour-Sandvik, and N. Lazarus
Solid-State Electronics 136, 36-42, 2017
Mg Incorporation Efficiency in Pulsed MOCVD of N-polar GaN:Mg
J. Marini; I. Mahaboob; K. Hogan; S. Novak; L.D. Bell; F. Shahedipour-Sandvik
Journal of Electronic Materials, Vol. 46, No. 10, 2017
Mechanical Analysis of Stretchable AlGaN/GaN High Electron Mobility Transistors
R. P. Tompkins, I. Mahaboob, S. Shahedipour-Sandvik, and N. Lazarus
ECS Trans., 72(89), May 2016
MOCVD growth of N-polar GaN on on-axis sapphire substrate: impact of AlN nucleation layer on GaN surface hillock density
J. Marini; J. Leathersich; I. Mahaboob; J. Bulmer; N. Newman; F. Shahedipour-Sandvik
Journal of Crystal Growth 442 (2016)
Single Photon Counting UV Solar-Blind Detectors using Silicon and III-Nitride Materials
S. Nikzad; M. Hoenk; A. Jewell; J. Hennessy; A. Carver; T. Jones; T. Goodsall; E. Hamden; P. Suvarna; J. Bulmer; F. Shahedipour-Sandvik; E. Charbon; P. Padmanabhan; B. Hancock; L.D. Bell
Sensors 16, 927 (2016)
Surface photovoltage studies of p-type AlGaN layers after reactive-ion etching
J.D. McNamara; K.L. Phumisithikul; A.A. Baski; J. Marini; F. Shahedipour-Sandvik; S. Das; M.A. Reshchikov
Journal of Applied Physics 120, 155304 (2016)
Visible-Blind Avalanche Photodetector heterostructure Device Design with Superior Field Confinement and Low Operating Voltage
J. Bulmer; P. Suvarna; J.M. Leathersich; J. Marini; I. Mahaboob; N. Newman; F. Shahedipour-Sandvik
IEEE Photonics Technology Letters 28, 39-42 (2015)
(Invited) AlGaN films and the devices where they are utilized
K. A. Jones, T. P. Chow, M. Wraback, M. Shatalov, Z. Sitar, F. Shahedipour, K. Udwary, G. S. Tompa
Journal of Materials Research, 50, 3267 (2015).
Avalanche Photodiodes via Atomic Layer Deposition
J. Hennessy; L. D. Bell; S. Nikzad; P. Suvarna; F. Shahedipour-Sandvik
NASA Tech Brief 38, 12 (2014)
Ion implantation based edge termination to improve III-nitride APD reliability and performance
P. Suvarna; J. Bulmer; J.M. Leathersich; J. Marini; I. Mahaboob; J. Hennessy; L.D. Bell; S. Nikzard; F. Shahedipour-Sandvik
IEEE Photonics Technology Letters 27(5) (2015)
Tunable thermal quenching of photoluminescence in GaN
M. Reshchikov; J. McNamara; F. Shahedipour-Sandvik
Physica Status Solidi (c) 11, 389-392 (2014)
GaN Power Schottky Diodes with Drift Layers Growth on Four Substrates
R.P. Tompkins; J.R. Smith; K.W. Kirchner; J. Leach; K. Udwary; E. Preble; P. Suvarna; J. Leathersich; F. Shahedipour-Sandvik
Journal of Electronic Materials 43, 850-855 (2014)
Study of thermal stability of distributed Bragg reflectors based on epitaxial rare-earth oxide and silicon heterostructures
R. Dargis; J.M. Leathersich; F. Shahedipour-Sandvik; E. Arkun; A. Clark
Journal of Vacuum Science and Technology B 32, 02C103 (2014)
Annealing Studies of AlN Capped, MOCVD Grown GaN Films
M. A. Derenge, K. W. Kirchner, K. A. Jones, P. Suvarna; F. Shahedipour-Sandvik
Solid State Electronics, accepted-in press (2014).
(Invited) AlGaN films and the devices where they are utilized.
K. A. Jones, R. Tompkins, J. Leathersich, P. Suvarna, F. Shahedipour-Sandvik
Journal of Materials Research, submitted (2014).
Atomic-layer deposition for improved performance of III-N Avalanche photodiodes.
J. Hennessy, L. D. Bell, S. Nikzad, P. Suvarna, J. Leathersich, J. Marini, F. Shahedipour-Sandvik
Journal of Vacuum Science and Technology, submitted (2014).
ALD sidewall passivation for p-i-n Avalanche photodiodes.
J. Hennessey, L. D. Bell, S. Nikzad, P. Suvarna, F. Shahedipour-Sandvik
Journal of Applied Physics, submitted (2014).
The influence of buffer layer coalescence on stress evolution in GaN grown on ion implanted AlN/Si (111) substrates.
J. C. Gagnon,, J. M. Leathersich, F. S. Shahedipour-Sandvik, & J. M. Redwing
(2014) Journal of Crystal Growth, 393, 98-102.
Deposition of GaN films on crystalline rare earth oxides by MOCVD
J. Leathersich, E. Arkun, A. Clark, P. Suvarna, J. Marini, R. Dargis, F. Shehedipour-Sandvik, J. of Crystal Growth
accepted-in press (2014).
(Invited) Enhanced performance of AlGaN/GaN high electron mobility transistor on Si by means of improved adatom diffusion length during MOCVD epitaxy
F. Shahedipour-Sandvik, J. Leathersich, R.P. Tompkins, P. Suvarna, M. Tungare, T.A. Walsh, K. W. Kirchner, S. Zhou, and K. A. Jones
Semiconductor Science & Technology, 28, 074002 (2013).
Hybrid n-GaN and polymer interface: model systems for tunable photodiodes
P. Kumar, S. Guha, F. Shahedipour-Sandvik, and K. S. Narayan
Organic Electronics, 14, 2818 (2013).
Modification of dislocation behavior in GaN overgrown on engineered AlN thin film-on- bulk Si substrate
M. Tungare, X. Weng, J. M. Leathersich, P. Suvarna, J. Redwing, and F. Shahedipour-Sandvik
Journal of Applied Physics, 113, 163108 (2013).
Homoepitaxial growth of non-polar AlN crystals using Molecular Dynamics simulations
J. A. Leathersich, M. Tungare, P. Suvarna, F. Shahedipour-Sandvik,
Surface Science, 617, 36 (2013).
Growth of GaN by MOCVD on Rare Earth Oxide on Si(111)
F. Erdem Arkun, Rytis Dargis, Andrew Clark, Robin S. Smith, Michael Lebby, Jeffrey M. Leathersich, F. Shahedipour-Sandvik
Electrochem. Soc. Confernce Proc. (2013).
Ion-Implantation-Induced Damage Characteristics Within AlN and Si for GaN-on-Si Epitaxy
J. Leathersich, M. Tungare, M. Evans, P. Suvarna, F. Shahedipour-Sandvik,
Journal of Electronic Materials, 42, 833 (2013).
Design and Growth of Visible-Blind and Solar-Blind III-N APDs on Sapphire Substrates
Puneet Suvarna, L. Douglas Bell, Mihir Tungare, Jeffrey M. Leathersich, Pratik Agnihotri, Shouleh Nikzad, F. (Shadi) Shahedipour-Sandvik
Journal of Electronic Materials, 42, 854 (2013).
HVPE GaN for high power electronic Schottky diodes
Randy P. Tompkins, Timothy A. Walsh, Michael A. Derenge, Kevin W. Kirchner, Shuai Zhou, Cuong B. Nguyen, Kenneth A. Jones, Gregory Mulholland, Robert Metzger, Jacob H. Leach, Puneet Suvarna, Mihir Tungare, and Fatemeh (Shadi) Shahedipour-Sandvik
Solid State Electronics 79, 238 (2013).
In situ stress measurements during GaN growth on ion-implanted AlN/Si substrates
J. C. Gagnon, M. Tungare, X. Weng, J. M. Leathersich, F. Shahedipour-Sandvik, J. M. Redwing
Journal of Electronic Materials 41, 865 (2012).
III-Nitride devices on Si: Challenges and opportunities
F. Shahedipour-Sandvik, M. Tungare, J. Leathersich, Suvarna, R. Tompkins, K. A. Jones,
Semicond. Dev. Res. Symp. (ISDRS), College Park, MD, (2011). DOI: 10.1109/ISDRS.2011.6135260. (2012)
Development of small unit cell avalanche photodiodes for UV imaging applications
A. K. Sood, R. E. Welser, R. A. Richwine, Y. R. Puri, R. D. Dupuis, J.-H. Ryou, N. K. Dhar, P. Suvarna, & F. Shahedipour-Sandvik.
SPIE Proc. 8375, Advanced Photon Counting Techniques VI, 83750R (2012).
A Tersoff-based interatomic potential for wurtzite AlN
M. Tungare, Y. Shi, N. Tripathi, P. Suvarna and F. Shahedipour-Sandvik
Physica Status Solidi (A): Applications and Materials Science 208, 1569 (2011).
Dielectric properties and thickness metrology of strain engineered GaN/AlN/Si (111) thin films grown by MOCVD
M. Tungare, V. K. Kamineni, F. Shahedipour-Sandvik, A. C. Diebold
Thin Solid Films 519, 2929 (2011).
AlGaN based III-nitride tunnel barrier hyperspectral detector: Effect of internal polarization
N. Tripathi, L. D. Bell, and F. Shahedipour-Sandvik
Journal of Applied Physics, 109 (2011).
(Invited) The effect of carbon impurities on lightly doped MOCVD GaN Schottky diodes
R. P. Tompkins, T. A. Walsh, M. A. Derenge, K. W. Kirchner, S. Zhou, C. B. Nguyen, K. A. Jones, P. Suvarna, M. Tungare, N. Tripathi, and F. Shahedipour-Sandvik
Journal of Materials Research 26, 2895 (2011).
AlGaN based III-nitride tunnel barrier hyperspectral detector for infrared detection
Shahedipour-Sandvik, F., Tripathi, N. & Bell, L. D.
Proceedings of SPIE - The International Society for Optical Engineering, 8155 (2011).
AlGaN based III-nitride tunnel barrier hyperspectral detector: Effect of internal polarization
Tripathi, N.; Bell, L. D.; Shahedipour-Sandvik, F.
Journal of Applied Physics 109, 124508 (2011)
Direct attachment of DNA to semiconducting surfaces for biosensor applications
N. M. Fahrenkopf, F. Shahedipour-Sandvik, N. Tokranova, M. Bergkvist, and N. C. Cady
Journal of Biotechnology, 150, 312 (2010).
Novel Cs-Free GaN Photocathodes
N. Tripathi, L.D. Bell, S. Nikzad, M. Tungare, P. Suvarna, and F. Shahedipour-Sandvik,
Journal of Electronic Materials, 40, 382 (2011).
Effect of n+ GaN cap polarization field on Cs-free GaN photocathodes characteristics
N. Tripathi, L. D. Bell, S. Nikzad, and F. Shahedipour-Sandvik,
Applied Physics Letters, 97, 052107 (2010).
Turn-on voltage engineering and enhancement-mode operation of AlGaN/GaN high electron mobility transistor using multiple heterointerfaces
N. Tripathi, V. Jindal, S. Rajan, A. Vert, and F. Shahedipour-Sandvik,
Solid State Electronics, 54, 1291 (2010).
Computational and experimental studies on the growth of non-polar surfaces of gallium nitride
V. Jindal, and F. Shahedipour-Sandvik,
Journal of Applied Physics, 107, 054907 (2010).
Theoretical prediction of GaN nanostructure equilibrium and non-equlibrium shapes
V. Jindal, and F. Shahedipour-Sandvik,
Journal of Applied Physics, 106, 083115 (2009).
Defect-related photoluminescence in Mg-doped GaN nanostructures
M. A. Reshchikov, F. Shahedipour-Sandvik, B. J. Messer, V. Jindal, N. Tripathi, and M. Tungare,
Physics B: Condensed Matter, 404, 4903 (2009).
Direct mobilization and hybridization of DNA on group III-nitride semiconductors
Xiabin Xu, V. Jindal, F. Shahedipour-Sandvik, M. Berkvitz, and N. Cady,
Applied Surface Science, 225, 5905 (2009).
Density functional theoretical study of surface structure and adatom kinetics for wurtzite AlN
V. Jindal, and F. Shahedipour-Sandvik,
Journal of Applied Physics, 105, 084902 (2009).
Density functional calculations of the strain effects on binding energies and adatom diffusion on (0001) GaN surfaces
J. R. Grandusky, V. Jindal, J. Reynolds, and F. Shahedipour-Sandvik,
Materials Science and Engineering B: Solid-state materials for advanced technology,158, 13 (2009).
III-nitride heterostructure layered tunnel barriers for a tunable hyperspectral detector
Bell, L. Douglas; Tripathi, Neeraj; Grandusky, J. R.; Jindal, Vibhu; Shahedipour-Sandvik, F. Shadi
IEEE Sensors Journal 8, 724-729 (2008)
Fully Tunable Hyperspectral Imaging Detector based on III-Nitride Dielectric Heterostructures
L. D. Bell, N. Tripathi, J. R. Grandusky, V. Jindal, and F. Shahedipour-Sandvik,
IEEE Sensors J., special issue on “Nanosensors for Defense and Security”, 8, 724 (2008).
Selective area heteroepitaxy of low dimensional a-plane and c-plane InGaN nanostructures using pulsed MOCVD
V. Jindal, N. Tripathi, M. Tungare, O. Pachos, P. Haldar, and F. Shahedipour-Sandvik,
Physica Status Solidi (c), 5, 1709 (2008).
Growth and characterization of a novel hyperspectral detector using the III-nitrides
N. Tripathi, L. D. Bell, J. R. Grandusky, V. Jindal, and F. Shahedipour-Sandvik,
Physica Status Solidi (c), 5, 2228 (2008).
Effect of interfacial strain on AlGaN hexagonal nanostructures by selective area heteroepitaxy
V. Jindal, J. R. Grandusky, N. Tripathi, B. Thiel, and F. Shahedipour-Sandvik,
Physica E: low dimensional systems and nanostructure, 40, 478 (2008).
Identification of subsurface damage in freestanding HVPE GaN substrates and its influence on epitaxial growth of GaN epilayers
Grandusky, J. R.; Jindal, V.; Tripathi, N.; Shahedipour-Sandvik, F.; Lu, H.; Kaminsky, E. B.; Melkote, R.
Journal of Crystal Growth 307, 309-314 (2007)
AlGaN based Tunable Hyperspectral Detector
N. Tripathi, J. Grandusky, V. Jindal, F. Shahedipour-Sandvik, and L. D. Bell,
Applied Physics Letter 90, 231103 (2007).
Identification of important growth parameters for the development of high quality Al>0.5GaN by MOCVD
J. R. Grandusky, M. Jamil, V. Jindal, N. Tripathi, and F. Shahedipour-Sandvik,
J. Vacuum Science and Technology A, 25(3), (2007).
Homoepitaxial growth and electrical characterization of GaN-based Schottky and light-emitting diodes
X. A. Cao, H. Lu, E. B. Kaminsky, S. D. Arthur, J. R. Grandusky, and F. Shahedipour-Sandvik,
J. Crystal Growth, 300, 382, (2007).
Mechanism of large area dislocation reduction in GaN layers on AlN/Si (111) by substrate engineering
M. Jamil, J. R. Grandusky, V. Jindal, N. Tripathi, and F. Shahedipour-Sandvik,
J. Applied Physics 102, 023701 (2007); Virtual Journal of Nanoscale Science & Technology, 16, 5 (2007).
Selective area heteroepitaxy of nano-AlGaN UV excitation sources for bioflourescence application
V. Jindal, J. R. Grandusky, F. Shahedipour-Sandvik, S. F. LeBouef, J. Balch, and T. Tolliver,
“Outstanding MRS Paper Award”, J. Materials Research 22, 838, (2007).
High resolution x-ray diffraction analyses of ion-implanted GaN/AlN/Si heterostructures
R. J. Matyi, M. Jamil, and F. Shahedipour-Sandvik,
Physica Status Solidi A, 204, 2598 (2007).
Development of pit-defect free smooth a-plane GaN surfaces on r-plane sapphire using MOCVD: A growth mechanism study
V. Jindal, J. Grandusky, M. Jamil, E. Irissou, F. Shahedipour-Sandvik, K. Matocha, and V. Tilak,
Physica Status Solidi (a) 3, 179, (2006).
Reduction of crack and dislocation defects in GaN layers grown on Si substrate by MOCVD using a substrate engineering technique
M. Jamil, E. Irissou, J. R. Grandusky, V. Jindal, and F. Shahedipour-Sandvik,
Physica Status Solidi (c) 3, 1787, (2006).
Development of native, single crystal AlN substrates for device applications
L. J. Schowalter, S. B. Schujman, W. Liu, M. Goorsky, M. C. Wood, J. Grandusky, and F. Shahedipour-Sandvik,
Physica Status Solidi (a) 203, 1667 (2006).
Origin of ring defects in high In content green InGaN/GaN MQW: An Ultrasonic Force Microscopy Study
F. Shahedipour-Sandvik, M. Jamil, K.Topol, J. R. Grandusky, K. A. Dunn, J. Ramer, and V. N. Merai,
MRS Internet J. Nitride Semiconductor Research 10, 3 (2005).
Deep green emission at 570nm from InGaN/GaN MQW active region grown on bulk AlN substrate
F. Shahedipour-Sandvik, J. R. Grandusky, M. Jamil, V. Jindal, S. B. Schujman, L. J. Schowalter, R. Liu, F. A. Ponce, M. Cheung, A. Cartwright
International Society for Optical Engineering, 5941, 37 (2005).
Development of Strain Reduced GaN on Si(111) by Substrate Engineering
M. Jamil, J. R. Grandusky, V. Jindal, S. Guha, A. Arif, and F. Shahedipour-Sandvik,
Applied Physics Letters 87, 82103 (2005).
Optimization of the active region of InGaN/GaN 405 nm light emitting diodes using statistical design of experiments for determination of interaction effects
J. R. Grandusky, M. Jamil, J. A. Deluca, S. F. LeBoeuf, X. A. Cao, S. D. Arthur, and F. Shahedipour-Sandvik,
J. Vacuum Science and Technology B 23, 1576 (2005).
Development of low dislocation and strain reduced GaN on Si(111) by substrate engineering
M. Jamil, J. R. Grandusky, V. Jindal, F. Shahedipour-Sandvik, S. Guha, M. Arif
International Society for Optical Engineering, 5941, 59411 (2005).
Important interaction effects in the growth of InGaN violet light emitting diodes by MOCVD
J. R. Grandusky, M. Jamil, V. Jindal, J. A. DeLuca, S. F. LeBoeuf, X. A. Cao, S. D. Arthur, F. Shahedipour-Sandvik
International Society for Optical Engineering, 5941, 144 (2005).
Strain dependent facet stabilization in selective area heteroepitaxial growth of GaN nanostructures
F. Shahedipour-Sandvik, J. R. Grandusky, A. Alizadeh, C. Keimel, S. Taylor, S. LeBoeuf, S. Ganthi, and P. Sharma,
Applied Physics Letters 87, 233108 (2005).
Virtual Journal of Nanoscale Science & Technology, 12, 24 (2005)
Microstructural origin of leakage current in GaN/InGaN Light Emitting Diodes
X. A. Cao, J. Teetsov, F. Shahedipour-Sandvik, and S. D. Arthur,
J. Crystal Growth, 264, 172 (2004).
Influence of defects on electrical and optical characteristics of GaN/InGaN-based light-emitting diodes
Xian-an Cao, K. Topol, F. Shahedipour-Sandvik, J. Teetsov, Peter M. Sandvik, Stephen E. LeBoeuf, Abasifreke Ebong, James W. Kretchmer, Edward B. Stokes, S. Arthur, Alain E. Kaloyeros, D. Walker,
International Society for Optical Engineering, 4776, 105 (2002).
Efficient GaN Photocathodes for Low-Level Ultra-Violet Signal Detection
F. Shahedipour, B. W. Wessels, M. P. Ulmer, C. Josef, and T. Nihashi,
IEEE J. of Quantum Electronics 38, 333 (2002).
Defects observed by optical detection of electron paramagnetic in electron-irradiated p-type GaN
L. S. Vlasenko, C. Bozdog, G. D. Watkins, F. Shahedipour and B. W. Wessels
Physica Review B 65, 205202 (2002).
AlxGa1-xN for Solar-Blind UV Photodetectors
P. Sandvik, K. Mi, F. Shahedipour, P. Kung, R. McClintock, A. Yasan, and M. Razeghi
J. of Crystal growth 231, 366 (2001).
Comparative Optical Studies of p-type and unintentionally doped GaN: The Influence of annealing
S. Guha, F. Shahedipour, R.C. Keller, V. Yang and B.W. Wessels
Applied Physics Letters 78, 58 (2001).
Progress in the fabrication of GaN photocathodes
Melville P. Ulmer, Bruce W. Wessels, Fatemeh Shahedipour, Roman Y. Korotokov, Charles L. Joseph, Tokuaki Nihashi,
International Society for Optical Engineering, 4288, 246 (2001).
On the origin of the 2.8 eV blue emission in p-type GaN:Mg: A time-resolved photoluminescence investigation
F. Shahedipour and B. W. Wessels
MRS Internet J. Nitride Semiconductor Research 6, 12 (2001).
AlxGa1-xN materials and device technology for solar blind ultraviolet photodetector applications
Ryan McClintock, Peter M. Sandvik, Kan Mi, Fatemeh Shahedipour, Alireza Yasan, Christopher L. Jelen, Patrick Kung, Manijeh Razeghi,
International Society for Optical Engineering, 4288, 219 (2001).
Solar-blind AlxGa1-xN p-i-n photodetectors grown on LEO and non-LEO GaN
Peter M. Sandvik, Danielle Walker, Patrick Kung, Kan Mi, Fatemeh Shahedipour, Vipan Kumar, Xinghong Zhang, Jacqueline E. Diaz, Christopher L. Jelen, Manijeh Razeghi,I
nternational Society for Optical Engineering, 3948, 265 (2000).
Lateral Epitaxial Overgrowth of GaN on Sapphire and Silicon Substrates for Ultraviolet Photodetector Applications
M. Razeghi, P. Sandvik, P. Kung, D. Walker, K. Mi, X. Zhang, V. Kumar, J. Diaz and F. Shahedipour
Materials Science and Engineering B 74, 107 (2000).
Investigation of the formation of the 2.8 eV luminescence band in p-type GaN:Mg:
F. Shahedipour, and B. W. Wessels
Applied Physics Letters 76, 3011 (2000).
Photoluminescence Band Near 2.9 eV in Undoped GaN Epitaxial Layers
M. A. Reshchikov, F. Shahedipour, R. Y. Korotkov, and B. W. Wessels
J. Applied Physics, 87, 3351 (2000).
Pressure Dependence of the Blue Luminescence in Mg doped GaN
S. Ves, U. D. Venkateswaran, I. Loa, K. Syassen, F. Shahedipour, B. W. Wessels
Applied Physics Letters, 77, 2536 (2000).
Optical Properties of Plasma Species Adsorbed during Diamond Deposition on Steel
F. Shahedipour, B. P. Conner, and H. W. White,
J. Applied Physics, 88, 3039 (2000).
Deep Acceptors in Undoped GaN
M. A. Reshchikov, F. Shahedipour, R.Y. Korotkov, M.P. Ulmer, and B. W. Wessels,
Physica B 273-274, 105 (1999).
Low Temperature Synthesis of Diamond-like Carbon Film on Steel Substrates by ECR-PACVD
S. Zhu, F. Shahedipour, and H. W. White,
J. American Ceramic Society, 81, 1041 (1998).
Evidence of Apical Oxygen in Artificially Superconducting SrCuO2- BaCuO2 Thin Films: A Raman Characterization.
S. Zhu, D. P. Norton, J. E. Chamberlin, F. Shahedipour, and H.W. White,
Physical Review B, 54, 1 (1996).
CONFERENCE PROCEEDING ARTICLES
E. Rocco, I. Mahabob, K. Hogan, S. Tozier, V. Meyers, B. McEwen, S. Novak, B. Mazumder, L.D. Bell, F. Shahedipour-Sandvik
Enhanced p-type conductivity in N-polar GaN photocathode structures and correlation with GaN hillock density
Proc. SPIE, Gallium Nitride Materials and Devices XIV, 10918, 2019
Impact of Interface Properties in N-polar Heterostructure GaN Photocathodes
E. Rocco; I. Mahaboob; K. Hogan; V. Meyers; S. Tozier; L.D. Bell; F. Shahedipour-Sandvik
Electronic Materials Conference, University of California Santa Barbara (2018)
Influence of Mask Material in Controlling the Electrical Properties of Selective Area Epitaxially Grown AlGaN-GaN Microstructures
I. Mahaboob; K. Hogan; E. Rocco; R. Tompkins; N. Lazarus; F. Shahedipour-Sandvik
Electronic Materials Conference, University of California Santa Barbara (2018)
Progress in Cesium-Free III-Nitride Photocathodes Based on Control of Polarization Charge
L.D. Bell; E. Rocco; J. Marini; S. Nikzad; F. Shahedipour-Sandvik
American Physical Society March Meeting, Los Angeles, California (2018)
Design and Bottom-Up Development of Stretchable Geometry AlGaN/GaN High Electron Mobility Transistors
I. Mahaboob; J. Marini; K. Hogan; E. Rocco; R. Tompkins; N. Lazarus; F. Shahedipour-Sandvik
Electronic Materials Conference, University of Notre Dame (2017)
Impact of Al Composition of AlxGa1-xN Alloys and GaN Polarity on Thermoelectric Properties of III-Nitrides
S. Tozier; M. Rivera; I. Mahaboob; K. Hogan; E. Rocco; J. Marini; F. Shahedipour-Sandvik
Electronic Materials Conference, University of Notre Dame (2017)
Investigation of Surface Treatments for Improved Quantum Efficiency in III-N Photocathodes
E. Rocco; J. Marini; I. Mahaboob; K. Hogan; J.D. McNamara; M.A. Reshchikov; L.D. Bell; F. Shahedipour-Sandvik
Electronic Materials Conference, University of Notre Dame (2017)
Monte Carlo Simulation of III-Nitride Photocathodes
J. Marini; I. Mahaboob; K. Hogan; E. Rocco; L.D. Bell; F. Shahedipour-Sandvik
Electronic Materials Conference, University of Notre Dame (2017)
Towards High Performance (Al)GaN Based Betavoltaic Device
K. Hogan; J. Marini; I. Mahaboob; E. Rocco; F. Shahedipour-Sandvik
Electronic Materials Conference, University of Notre Dame (2017)
Development of Stretchable Geometry AlGaN/GaN HEMTs with Selective Area Epitaxial Growth Technique
I. Mahaboob; J. Marini; K. Hogan; R.P. Tompkins; N. Lazarus; F. Shahedipour-Sandvik
International Workshop on Nitride Semiconductors, Orlando (2016)
Optimization of (Al)GaN Based Betavoltaic Device
K. Hogan; J. Marini; I. Mahaboob; F. Shahedipour-Sandvik
International Workshop on Nitride Semiconductors, Orlando (2016)
Mg dopant incorporation efficiency in pulsed MOCVD Growth of N-polar p-GaN
J. Marini; I. Mahaboob; K. Hogan; S. Novak; L.D. Bell; S. Nikzad; F. Shahedipour-Sandvik
Electronic Materials Conference, University of Delaware (2016)
Thermoelectric Properties of III-Nitrides Single Layer and Heterojunctions
S. Tozier; I. Mahaboob; S. Chakraborty; N. Newman; J. Marini; F. Shahedipour-Sandvik
Electronic Materials Conference, University of Delaware (2016)
Impact of Mg-Doping on the Stress Evolution in GaN Epitaxy on Si Substrate
J. Leathersich; I. Mahaboob; J. Marini; J. Bulmer; N. Newman; F. Shahedipour-Sandvik
Electronic Materials Conference, University of Delaware (2016)
Stress Modification and Surface Morphology Improvement in Epitaxially Grown a-plane GaN Using Indium Surfactant
N. Newman; J. Marini; I. Mahaboob; K. Hogan; D. Anderson; R. Hull; F. Shahedipour-Sandvik
Electronic Materials Conference, University of Delaware (2016)
Performance Enhancement in AlGaN/GaN HEMT Characteristics with the Implementation of Dynamic Body Bias Technique
I. Mahaboob; J. Leathersich; J. Marini; J. Bulmer; N. Newman; F. Shahedipour-Sandvik
Materials Research Society Fall Meeting, Boston (2015)
Challenges for Solar-Blind III-Nitride based Photocathodes
J. Marini; J. Leathersich; I. Mahaboob; J. Bulmer; N. Newman; L.D. Bell; S. Nikzad; J. Hennessy; F. Shahedipour-Sandvik
Electronic Materials Conference, Ohio State University (2015)
Impact of Dopant Species on Lateral Overgrowth of GaN by Pulsed MOCVD on Chemically Treated Core Shell GaN on Silicon
N. Newman; M. Kotha; J. Leathersich; J. Marini; I. Mahaboob; J. Bulmer; F. Shahedipour-Sandvik; R. Debnath; A. Motayed
Electronic Materials Conference, Ohio State University (2015)
GaN Based P-i-N Devices for Betavoltaic Microbatteries
M.R. Khan; J.R. Smith; S. Kelley; K. Kirchner; R.P. Tompkins; I. Mahaboob; J. Leathersich; J. Marini; P. Suvarna; F. Shahedipour-Sandvik; K.A. Jones; A. Iliadis
Electronic Materials Conference, Ohio State University (2015)
Implementation of Dynamic Body-Bias Technique in AlGaN/GaN High Electron Mobility Transistors (HEMTs)
I. Mahaboob; J. Leathersich; J. Marini; J. Bulmer; N. Newman; F. Shahedipour-Sandvik
Electronic Materials Conference, Ohio State University (2015)
Atomic-layer deposition for improved performance of III-N Avalanche Photodiodes
J. Hennessy, L. D. Bell, S. Nikzad, P. Suvarna, J. Leathersich, J. Marini, F. Shahedipour-Sandvik
Materials Reseach Society Symposiym Proceeding (2014)
Crack-free III-nitride structures (> 3.5 µm) on silicon
M. Tungar, J. M. Leathersich, N. Tripathi, P. Suvarna, F. Shahedipour-Sandvik, T. A. Walsh, R. P. Tompkins, and K. A. Jones,
Materials Research Society Symposium Proceedings 1324, 9 (2012).
III-Nitride devices on Si: Challenges and opportunities
F. Shahedipour-Sandvik; M. Tungare; J. Leathersich; P. Suvarna; R. Tompkins; K.A. Jones
Semiconductor Device Research Symposium (ISDRS) (2012)
Development of small unit cell avalance photodiodes for UV imaging applications
Sood, A.K.; Welser, R.E.; Richwine, R.A.; Puri, Y.R.; Dupuis, R.D.; Ryou, J.-H.; Dhar, N.K.; Suvarna, P.; Shahedipour-Sandvik, F.
Proceedings of SPIE 8375, Advanced Photon Counting Techniques VI, 83750R (2012)
Materials Research Society Symposium Proceedings: Preface
Bell, L.D.; Shahedipour-Sandvik, F.; Jones, K.A.; Schaadt, D.; Simpkins, B.S.; Contreras, M.A.
Materials Research Society Symposium Proceedings 1324, ix-x (2012)
Crack-free III-nitride structures (>3.5&u;m) on silicon
M. Tungare; J.M. Leathersich; N. Tripathi; P. Suvarna; F. Shahedipour-Sandvik; T.A. Walsh; R.P. Tompkins; K.A. Jones Materials Research Society Symposium Proceedings 1324, 9-15 (2012)
AlGaN based III-nitride tunnel barrier hyperspectral detector for infrared detection
Shahedipour-Sandvik, F.; Tripathi, N.; Bell, L.D.
Proceedings of SPIE 5155, 81550P (2011)
A III-nitride Layered Barrier Structure for Hyperspectral Imaging Applications
Douglas Bell, Neeraj Tripathi, James Grandusky, Vibhu Jindal and Fatemeh Shahedipour-Sandvik.
Materials Research Society Symposium Proceedings, 1167 (2009).
Exploiting Phosphate Dependent DNA Immobilization on HfO2, ZrO2 and AlGaN for Integrated Biosensors
Nicholas M Fahrenkopf, Vibhu Jindal, Neeraj Tripathi, Serge Oktyabrsky, Fatemeh Shahedipour-Sandvik, Natalya Tokranova, Magnus Bergkvist and Nathaniel C Cady
Materials Research Society Symposium Proceedings 1236 (2009).
Effect of interfacial strain on shape and composition of MOCVD grown III-Nitride nanostructures
V. Jindal, J. R. Grandusky, N. Tripathi, M. Tungare, and F. Shahedipour-Sandvik,
Materials Research Society Symposium Proceedings ,1087 (2008).
Density functional calculations of the binding energies and adatom diffusion on strained AlN (0001) and GaN (0001) surface
V. Jindal, J. R. Grandusky, N. Tripathi, M. Tungare, and F. Shahedipour-Sandvik
Materials Research Society Symposium Proceedings, 1040 (2008).
Development of homoepitaxially grown GaN thin film layers on freestanding bulk m-plane substrates by metalorganic chemical vapor deposition (MOCVD)
V. Jindal, J. R. Grandusky, M. Tungare, N. Tripathi, F. Shahedipour-Sandvik, P. Sandvik, V. Tilak
Materials Research Society Symposium Proceedings, 1040 (2008).
Ultrafast carrier dynamics and recombination in green emitting InGaN MQW LED
A. N. Cartwright, M. Cheung, F. Shahedipour-Sandvik, J. R. Grandusky, M. Jamil, V. Jindal, C. Wetzel, P. Li, T. Dtchprohm, and J. Nelson
Materials Research Society Symposium Proceedings, 916, 7 (2006).
Selective area heteroepitaxy of nano-AlGaN UV excitation sources for bioflourescence application
V. Jindal, J. R. Grandusky, F. Shahedipour-Sandvik, S. F. LeBouef, J. Balch, and T. Tolliver
Materials Research Society Symposium Proceedings, 916, 97 (2006).
Effect of HVPE GaN substrate condition on the characteristics and performance of 405nm LEDs
J. R. Grandusky, M. Jamil, V. Jindal, F. Shahedipour-Sandvik, H. Lu, X._A. Cao, and E. B. Kaminsky
Materials Research Society Symposium Proceedings, 916, 91(2006).
Dislocation reduction and structural properties of GaN layers grown on N+implanted AlN/Si (111) substrates
M. Jamil, J. R. Grandusky, V. Jindal, N. Tripathi and F. Shahedipour-Sandvik
Materials Research Society Symposium Proceedings, 892 (2005).
Effects of GaN template annealing on the optical and morphological quality of the homoepitaxially overgrown GaN layer
James R. Grandusky, Vibhu Jindal, Muhammad Jamil and Fatemeh Shahedipour-Sandvik
Materials Research Society Symposium Proceedings, 892 (2005).
Deep green emission at 570nm from InGaN/GaN MQW active region grown on bulk AlN substrate
F. Shahedipour-Sandvik; J.R. Grandusky; M. Jamil; V. Jindal; S.B. Schujman; L.J. Schowalter; R. Liu; F.A. Ponce; M. Cheung; A. Cartwright
Proceedings of SPIE 5941, 594107 (2005)
Development of low dislocation and strain reduced GaN on Si(111) by substrate engineering
M. Jamil; J.R. Grandusky; V. Jindal; F. Shahedipour-Sandvik; S. Guha; M. Arif
Proceedings of SPIE 5941, 59411E (2005)
Important interaction effects in the growth of InGaN violet light emitting diodes by MOCVD
J.R. Grandusky; M. Jamil; V. Jindal; J.A. DeLuca; S.F. LeBoeuf; X.A. Cao; S.D. Arthur; F. Shahedipour-Sandvik
Proceedings of SPIE 5941, 59410W (2005)
Effect of GaN Surface Treatment on the Morphological and Optoelectronic properties of Violet Light Emitting Diodes
M. Jamil, J. R. Grandusky and F. Shahedipour-Sandvik
Materials Research Society Symposium Proceedings, 831 (2004).
Influence of defects on electrical and optical characteristics of GaN/InGaN-based light-emitting diodes
X.-A. Cao; K. Topol; F. Shahedipour-Sandvik; J. Teetsov; P.M. Sandvik; S.E. LeBoeuf; A. Ebong; J.W. Kretchmer; E.B. Stokes; S. Arthur; A.E. Kaloyeros; D. Walker
Proceedings of SPIE 4776, 105 (2002) doi: 10.1117/12.452581
Progress in the fabrication of GaN photocathodes
M.P. Ulmer; B.W. Wessels; F. Shahedipour; R.Y. Korotkov; C.L. Joseph; T. Nihashi
Proceedings of SPIE 4288, 246 (2001)
AlxGa1-xN materials and device technology for solar blind ultraviolet photodetector applications
R. McClintock; P.M. Sandvik; K. Mi; F. Shahedipour; A. Yasan; C.L. Jelen; P. Kung; M. Razeghi
Proceedings of SPIE 4288, 219 (2001)
Solar blind AlxGa1-xN p-i-n photodetectors grown on LEO and non-LEO GaN
P.M. Sandvik; D. Walker; P. Kung; K. Mi; F. Shahedipour; V. Kumar; X. Zhang; J.E. Diaz; C.L. Jelen; M. Razeghi
Proceedings of SPIE 4288, 265 (2001)
In Situ FTIR Spectroscopic Detection of Adsorbed Species on Sapphire Substrate in a Diamond ECR-PACVD System
F. Shahedipour, S. Zhu, and H. W. White,
Materials Research Society Symposium Proceedings, 502 (1998).
Determination of hydrogen in CVD diamond by notched neutron spectrum technique and FTIR
F. Golshani, W. H. Miller, M. A. Prelas, T. Sung, G. Popovici, G. Manning, S. K. Loyalka, F. Shahedipour. H. W. White, W. D. Brown, A. P. Malshe. and H. A. Naseem, Materials
Research Society Symposium Proceedings, 416, 361 (1996).
Growth and Characterization of Polycrystalline Diamond Films on Porous Silicon By Hot Filament CVD
S. Mirzakuchak, E.J. Charlson, E.M. Charlson, T. Stacy, F. Shahedipour, H. W. White
Materials Research Society Symposium Proceedings, 423 (1996).
Raman and FTIR Study of Neutron Irradiated CVD Diamond
S. Khasawinah, G. Popovici, M. A. Prelas, M. McCormick, S. K. Loyalka, G. Manning, J. Farmer, H. W. White, and F. Shahedipour
Materials Research Society Symposium Proceedings, 416, 223 (1996).
CONFERENCE PRESENTATIONS
Toward Highly Efficient P-Doping in III-Nitride Optoelectronics: MOCVD Growth of Be-Doped GaN
B. McEwen, M. Reshchikov, E. Rocco, V. Meyers, K. Hogan, O. Andrieiev, M. Vorobiov, D. Demchenko, and S. Shahedipour-Sandvik
in Gallium Nitride Materials and Devices XVII, 2022, PC12001, 84
Microwave-Induced Annealing, Its Impact on Mg Diffusion and Photoluminescence Activity in Implanted and In Situ Doped GaN
V. Meyers, E. Rocco, K. Hogan, B. McEwen, M. A. Derenge, K. A. Jones, M. Shevelev, V. Sklyar, and F. Shahedipour-Sandvik
in 63rd Electronic Materials Conference, 2021, 151
AlGaN/GaN HEMT-Based Detection of Reactive Oxygen Species Molecule H2O2
I. Mahaboob, R. J. Reinertsen, B. McEwen, K. Hogan, E. Rocco, V. Meyers, J. A. Melendez, N. C. Cady, and F. Shahedipour-Sandvik
in 63rd Electronic Materials Conference, 2021, 91
(Invited) Defect Microstructural Evolution of Co-Implanted and Gyrotron Microwave-Annealed GaN
S. Shahedipour-Sandvik, V. Meyers, E. Rocco, K. Hogan, B. McEwen, M. Derenge, K. Jones, M. Shevelev, and V. Sklyar
in ECS Meeting Abstracts, 2021, MA2021-02, 998–998
Cs-Free N-Polar III-Nitride Photocathode Detectors with High Quantum Efficiency: Role of Impurity Incorporation at Interfaces and Planes
E. Rocco, K. Hogan, V. Meyers, B. McEwen, L. D. Bell, and F. S. Shahedipour-Sandvik
in Gallium Nitride Materials and Devices XVI, 2021, 11686, 34
In Operando Investigation of GaN PIN Device Characteristics under Electron Irradiation Energies Comparable to Pm-147 Source for Betavoltaic Application
K. Hogan, M. Rodriguez, E. Rocco, V. Meyers, B. McEwen, and F. Shahedipour-Sandvik
in 62nd Electronic Materials Conference, 2020, 94
Oxygen Impurity Incorporation Due to Growth Interruption and Its Diffusion from These Interfaces in N-Polar GaN:Mg Films Grown by MOCVD and Its Implication in Photocathode Device Characteristics
E. Rocco, K. Hogan, V. Meyers, B. McEwen, L. Douglas Bell, and F. Shahedipour-Sandvik
in 62nd Electronic Materials Conference, 2020, 64
Secondary Effects in Electrical Behavior of Body-Diode Integrated AlGaN/GaN HEMTS
I. Mahaboob, M. Yakimov, E. Rocco, K. Hogan, V. Meyers, and F. S. Shahedipour-Sandvik
in ECS Meeting Abstracts, 2020, MA2020-02, 3598–3598
V. Meyers et al. “P-type Conductivity in Mg-implanted GaN by Microwave Gyrotron Annealing”, 62nd Electronic Materials Conference June 2020
S. Shahedipour-Sandvik et al. Keynote, “Wide band-gap semiconductor power electronics”, 8th European Conference on Renewable Energy Systems, Istanbul, Turkey, June 2020
S. Shahedipour-Sandvik et al., Invited, “ECS 2020 title”, PRiME (ECS) Oct. 2020
V. Meyers et al. “P-Conductivity in Co-Implanted and Gyrotron Microwave-Annealed GaN: Optical and Electrical Studies”, PRiME (ECS), Oct. 2020
B. McEwen, I. Mahaboob, K. Hogan, E. Rocco, V. Meyers, S. Tozier, A. Lelis, R. Green, F. Nouketcha, F. Shahedipour-Sandvik
Effects of Forming Gas Anneal on the Structure of Al2O3/GaN Interface
The 61st Electronic Materials Conference, Ann Arbor, MI, 2019
B. McEwen, I. Mahaboob, K. Hogan, E. Rocco, V. Meyers, S. Tozier, A. Lelis, R. Green, F. Nouketcha, F. Shahedipour-Sandvik
Effects of Semiconductor Surface Treatments and Dielectric Anneal on the Electrical Characteristics of GaN based Metal-Insulator-Semiconductor Devices
MRS International Conference on Nitride Semiconductors, Bellevue, WA, 2019
I. Mahaboob, M. Yakimov, S. Tozier, K. Hogan, E. Rocco, F. Shahedipour-Sandvik
Integrated Body-Diode Back-Gate Control in AlGaN/GaN HEMTs
The 61st Electronic Materials Conference, Ann Arbor, MI, 2019
K. Hogan, S. Tozier, E. Rocco, I. Mahaboob, V. Meyers, B. McEwen, F. Shahedipour-Sandvik, R. Tompkins, M. Derenge, K. Jones, M. Shevelev, V. Sklyar, A. Lang, J. Hart, M. Taheri and M. Reshchikov
Novel Gyrotron Beam Annealing Method for Mg-Implanted Bulk GaN
2019 IEEE International Reliability Physics Symposium (IRPS), 2019
K. Hogan, S. Tozier, M. Graziano, M. Derenge, M. Shevelev, V. Sklyar, A.C. Lang, K. Jones, M.L. Taheri, W. Sung, and F. Shahedipour-Sandvik
Magnesium implant-activation in GaN: Impact of high temperature annealing techniques on the state of implant induced defects and Mg activation.
SPIE Photonics West, San Francisco, CA, 2019
K. Hogan, S. Tozier, E. Rocco, I. Mahaboob, V. Meyers, B. McEwen, F. Shahedipour-Sandvik, R. Tompkins, M. Derenge, K. Jones, M. Shevelev, V. Sklyar, A. Lang, J. Hart, M. Taheri and M. Reshchikov.
High Power GaN Devices: Novel Gyrotron Beam Annealing Method for Mg-Implanted Bulk GaN as an Enabling Technology.
The International Reliability Physics Symposium, Monterey, CA, 2019
S. Tozier, M. Reshchikov, K. Hogan, E. Rocco, V. Meyers, B. McEwen, I. Mahaboob, M. Shevelev, V. Sklyar, R. Tompkins, M. Derenge, A. Lang, K. Jones, M. Taheri, W. Sung and F. Shahedipour-Sandvik
Photoluminescence characterization of high temperature microwave annealed homoepitaxially grown Mg-implanted GaN.
The MRS Electronic Materials Conference, Ann Arbor, MI, 2019
K. Hogan, E. Rocco, S. Tozier, V. Meyers, M. Shevelev, V. Sklyar, R. Tompkins, M. Derenge, K. Jones, J. Hart, M. Taheri, W. Sung, and F. Shahedipour-Sandvik
Toward selective activation of Mg doped GaN: Impact of pulsed and continuous gyrotron annealing.
The MRS International Conference on Nitride Semiconductors, Bellevue, WA, 2019
F. Shahedipour-Sandvik
Impact of post implantation annealing on defect microstructural evolution in GaN:Mg.
Invited talk at the International Conference on Defects in Semiconductors, Seattle, WA, 2019
K. Hogan, J. Russo, M. Litz, I. Mahaboob, E. Rocco, S. Tozier, V. Meyers, B. McEwen, and F. Shahedipour-Sandvik
Increased Collection Efficiency by Design Improvements for Planar GaN-Based Betavoltaic Battery
Electronic Materials Conference, Presentation, 2019.
E. Rocco, I. Mahabob, K. Hogan, S. Tozier, V. Meyers, B. McEwen, O. Licata, B. Mazumder, M. Reshchikov, F. Shahedipour-Sandvik
Impact of Hillock Density and Mg-clustering on Properties of N-polar GaN:Mg
The 61st Electronic Materials Conference, June 2019, Ann Arbor, MI.
Design and Bottom-Up Development of Stretchable Geometry AlGaN/GaN High Electron Mobility Transistors
I. Mahaboob, J. Marini, K. Hogan, E. Rocco, F. Shadi Shahedipour-Sandvik, R. Tompkins and N. Lazarus
Electronic Materials Conference, University of Notre Dame (2017)
Impact of Al Composition of AlxGa1-xN Alloys and GaN Polarity on Thermoelectric Properties of III-Nitrides
S. Tozier, M. J. Rivera, I. Mahaboob, K. Hogan, E. Rocco, J. Marini and F. Shadi ShahedipourSandvik
Electronic Materials Conference, University of Notre Dame (2017)
Monte Carlo Simulation of III-Nitride Photocathodes
J. Marini, I. Mahaboob, K. Hogan, E. Rocco, L. D. Bell and F. Shadi Shahedipour-Sandvik
Electronic Materials Conference, University of Notre Dame (2017)
Towards High Performance (Al)GaN Based Betavoltaic Device
K. Hogan, J. Marini, I. Mahaboob, E. Rocco and F. Shadi Shahedipour-Sandvik
Electronic Materials Conference, University of Notre Dame (2017)
Investigation of Surface Treatments for Improved Quantum Efficiency in III-N Photocathodes
E. Rocco, J. Marini, I. Mahaboob, K. Hogan, J. D. McNamara, M. A. Reshchikov, L. D. Bell and F. Shadi Shahedipour-Sandvik
Electronic Materials Conference, University of Notre Dame (2017)
Development of Stretchable Geometry AlGaN/GaN HEMTs with Selective Area Epitaxial Growth Technique
I. Mahaboob; J. Marini; K. Hogan; R.P. Tompkins; N. Lazarus; F. Shahedipour-Sandvik
International Workshop on Nitride Semiconductors, Orlando (2016)
Optimization of (Al)GaN Based Betavoltaic Device
K. Hogan; J. Marini; I. Mahaboob; F. Shahedipour-Sandvik
International Workshop on Nitride Semiconductors, Orlando (2016)
Mg dopant incorporation efficiency in pulsed MOCVD Growth of N-polar p-GaN
J. Marini; I. Mahaboob; K. Hogan; S. Novak; L.D. Bell; S. Nikzad; F. Shahedipour-Sandvik
Electronic Materials Conference, University of Delaware (2016)
Thermoelectric Properties of III-Nitrides Single Layer and Heterojunctions
S. Tozier; I. Mahaboob; S. Chakraborty; N. Newman; J. Marini; F. Shahedipour-Sandvik
Electronic Materials Conference, University of Delaware (2016)
Impact of Mg-Doping on the Stress Evolution in GaN Epitaxy on Si Substrate
J. Leathersich; I. Mahaboob; J. Marini; J. Bulmer; N. Newman; F. Shahedipour-Sandvik
Electronic Materials Conference, University of Delaware (2016)
Stress Modification and Surface Morphology Improvement in Epitaxially Grown a-plane GaN Using Indium Surfactant
N. Newman; J. Marini; I. Mahaboob; K. Hogan; D. Anderson; R. Hull; F. Shahedipour-Sandvik
Electronic Materials Conference, University of Delaware (2016)
Performance Enhancement in AlGaN/GaN HEMT Characteristics with the Implementation of Dynamic Body Bias Technique
I. Mahaboob; J. Leathersich; J. Marini; J. Bulmer; N. Newman; F. Shahedipour-Sandvik
Materials Research Society Fall Meeting, Boston (2015)
Challenges for Solar-Blind III-Nitride based Photocathodes
J. Marini; J. Leathersich; I. Mahaboob; J. Bulmer; N. Newman; L.D. Bell; S. Nikzad; J. Hennessy; F. Shahedipour-Sandvik
Electronic Materials Conference, Ohio State University (2015)
Impact of Dopant Species on Lateral Overgrowth of GaN by Pulsed MOCVD on Chemically Treated Core Shell GaN on Silicon
N. Newman; M. Kotha; J. Leathersich; J. Marini; I. Mahaboob; J. Bulmer; F. Shahedipour-Sandvik; R. Debnath; A. Motayed
Electronic Materials Conference, Ohio State University (2015)
GaN Based P-i-N Devices for Betavoltaic Microbatteries
M.R. Khan; J.R. Smith; S. Kelley; K. Kirchner; R.P. Tompkins; I. Mahaboob; J. Leathersich; J. Marini; P. Suvarna; F. Shahedipour-Sandvik; K.A. Jones; A. Iliadis
Electronic Materials Conference, Ohio State University (2015)
Implementation of Dynamic Body-Bias Technique in AlGaN/GaN High Electron Mobility Transistors (HEMTs)
I. Mahaboob; J. Leathersich; J. Marini; J. Bulmer; N. Newman; F. Shahedipour-Sandvik
Electronic Materials Conference, Ohio State University (2015)
Permanent NEA in Cs-free AlGaN/GaN Photocathodes
J. Marini; P. Suvarna; J. Leathersich; I. Mahaboob; L.D. Bell; S. Nikzad; J. Hennessy; F. Shahedipour-Sandvik
Materials Research Society Fall Meeting, Boston (2013)
Device Designs for High Performance III-N Avalanche Photodiodes
P. Suvarna; J. Leathersich; J. Marini; F. Shahedipour-Sandvik; L.D. Bell; J. Hennessy; S. Nikzad
Materials Research Society Fall Meeting, Boston (2013)
Atomic-Layer Deposition for Improved Performance of III-N Avalanche Photodiodes
L.D. Bell; J. Hennessy; S. Nikzad; P. Suvarna; J. Leathersich; J. Marini; F. Shahedipour-Sandvik
Materials Research Society Fall Meeting, Boston (2013)
Homoepitaxial Growth of Non-Polar AlN Crystals Using Molecular Dynamics Simulations
J. Leathersich; P. Suvarna; F. Shahedipour-Sandvik
Electronic Materials Conference, Notre Dame University (2013)
Rare Earth Oxides Buffer Layers for Epitaxy of GaN Films on Si(111) Substrates
J. Leathersich; A. Clarke; E. Arkun; P. Suvarna; F. Shahedipour-Sandvik
Electronic Materials Conference, Notre Dame University (2013)
Improved epitaxial material quality of AlxGa1-xN films using Pulsed MOCVD for High Electron Mobility Transistors on Silicon
P. Suvarna; J.M. Leathersich; J. Marini; F. Shahedipour-Sandvik; R.P. Tompkins; K.A. Jones
Electronic Materials Conference, Notre Dame University (2013)
HVPE GaN for High Power Electronic Devices
R.P. Tompkins; J.R. Smith; S. Zhou; M.A. Derenge; K.A. Jones; J.H. Leach; E. Preble; K. Udwary; J.M. Leathersich; P. Suvarna; F. Shahedipour-Sandvik
Electronic Materials Conference, Notre Dame University (2013)
Permanent NEA in Cs-free AlGaN/GaN Photocathodes
J. Marini; P. Suvarna; J.M. Leathersich; L.D. Bell; S. Nikzad; J. Hennessy; F. Shahedipour-Sandvik
Electronic Materials Conference, Notre Dame University (2013)
Ion-implantation induced damage characteristics within AlN and Si for GaN on Si epitaxy
Jeffrey M. Leathersich; Mihir Tungare; Xiaojun Weng; Puneet Suvarna; Pratik Agnihotri; Morgan Evans Joan Redwing; F. (Shadi) Shahedipour-Sandvik
Electronic Materials Conference, Pennsylvania State University (2012)
Pulsed metal-organic chemical vapor deposition of AlN nucleation layer on Si for enhanced green emission from InGaN multiple quantum wells
Jeffrey M. Leathersich; Mihir Tungare; Xiaojun Weng; Jarod Gagnon; Puneet Suvarna; Joan Redwing; F. (Shadi) Shahedipour-Sandvik
Electronic Materials Conference, Pennsylvania State University (2012)
Design architectures for high performance III-N solar blind avalanche photodiodes
Puneet Suvarna; L. Douglas Bell; Mihir Tungare; Jeffrey M. Leathersich; Pratik Agnihotri; Shouleh Nikzad; F. (Shadi) Shahedipour-Sandvik
Electronic Materials Conference, Pennsylvania State University (2012)
Achieving Low Doped (<1016) GaN with Large Breakdown Voltages (~1000 V)
K. Jones; R. Tompkins; M. Derenge; K. Kirchner; S. Zhou; R. Metzger; J. Leach; P. Suvarna; M. Tungare; F. Shahedipour-Sandvik
Electrochemical Society conference, Honolulu, Hawaii (2012)
Invited: III-Nitride based Nanostructures
F. Shahedipour-Sandvik
Virginia Commonwealth University, VA (2012)
Invited: GaN Devices on Si
F. Shahedipour-Sandvik
Tsukuba Nanotechnology Symposium, Tsukuba, Japan (2012)
Development of small unit cell avalanche photodiodes for UV imaging applications
Ashok K. Sood; Roger E. Welser; Robert A. Richwine; Yash R. Puri; Russell D. Dupuis; Jae-Hyun Ryou; Nibir K. Dhar; P. Suvarna; F. Shahedipour-Sandvik
SPIE- Infrared Sensors, Devices, and Applications, San Diego, CA (2012)
Impact of Si Substrate Engineering on AlN-Si Interface: Correlation with Stress Evolution of Overgrown GaN
Jeffrey M. Leathersich; Mihir Tungare; Xiaojun Weng; Jarod Gagnon; Puneet Suvarna; Vimal K. Kamineni; Joan Redwing; Alain C. Diebold Fatemah (Shadi) Shahedipour-Sandvik
Materials Research Society Fall Meeting, Boston (2011)
Invited: III-Nitride Devices on Si: Challenges and Opportunities
F. (Shadi) Shahedipour-Sandvik; Mihir Tungare; Jeffrey M. Leathersich; Xiaojun Weng; Jarod Gagnon; Puneet Suvarna; Joan Redwing; Randy P. Tompkins; Kenneth A. Jones
International Semiconductor Device Research Symposium, Maryland. (2011)
Invited: AlGaN based III-nitride tunnel barrier hyperspectral detector for infrared detection
F. Shahedipour-Sandvik; N. Tripathi; L. Bell
SPIE-Infrared Sensors, Devices, and Applications, San Diego, CA (2011)
Invited: AlGaN APD
F. Shahedipour-Sandvik
Keck Institute for Space Studies, Los Angeles, CA (2011)
GaN Power Schottky Diodes
R. Tompkins; K. Jones; F. Shahedipour-Sandvik
Electrochemical Society , IWN (2011)
Invited: Facet Evolution and Electrical Properties Determination of 3D III-Nitride (Nano)Structures
F. Shahedipour-Sandvik
Renselear polytechnique Institute (2010)
Structural and Electrical Characteristics of Facets in Three-Dimensional Setting: Rationale Design of III-Nitride Nanostructures
V. Jindal; N. Tripathi; M. Tungare; P. Suvarna; J. D. Ferguson; M. A. Foussekis; A. A. Baski; M. A. Reshchikov; F. (Shadi) Shahedipour Sandvik
International Workshop on Nitride Semiconductors, Tampa, FL (2010)
Novel Cs-free GaN and AlGaN photocathodes
N. Tripathi; L. D. Bell; S. Nikzad; M. Tungare; P. Suvarna; F. Shahedipour-Sandvik
International Workshop on Nitride Semiconductors, Tampa, FL (2010)
Structural and thermodynamic properties of wurtzite AlN using a Tersoff-based interatomic potential
M. Tungare; Y. Shi; N. Tripathi; P. Suvarna; F. Shahedipour-Sandvik
International Workshop on Nitride Semiconductors, Tampa, FL (2010)
Optical techniques for growth and characterization of engineered GaN/AlN/Si film stack
M. Tungare; V. K. Kamineni; J. Gagnon; J. Redwing; A. C. Diebold; F. Shahedipour-Sandvik
International Workshop on Nitride Semiconductors, Tampa, FL (2010)
Dielectric properties and thickness metrology of strain engineered GaN/AlN/Si (111) thin films grown by MOCVD
M. Tungare; V. K. Kamineni; F. Shahedipour-Sandvik; A. C. Diebold
5th International Conference on Spectroscopic Ellipsometry, Albany, NY (2010)
Impact of Substrate Orientation on Facet Stabilization Characteristics of III-Nitrides nanostructures
V. Jindal; F. Shahedipour-Sandvik
15th International Conference on Metalorganic Vapor Phase Epitaxy, Lake Tahoe (2010)
Novel Cs-free GaN photocathodes
N. Tripathi; L. D. Bell; S. Nikzad; M. Tungare; P. Suvarna; F. Shahedipour-Sandvik
Electronic Materials Conference, University of Notre Dame, Indiana (2010)
Invited: Development of III-Nitride 3D nanostructures
F. Shahedipour-Sandvik
Army Research Laboratory (2009)
Invited: Defects in Mg doped (Al,In)GaN thin films and nanostructures
F. Shahedipour-Sandvik
American Physical Society, Pittsburg, PA (2009)
Foundations Approach to Interdisciplinary Graduate Education in Nanoscale Science and Engineering,
F. Shahedipour-Sandvik; B. Thiel; R. Mayti; R. Geer; M. Carpenter
Materials Research Society Spring Meeting, Boston, MA (2009)
Extreme ultraviolet/Vacuum ultraviolet/ultraviolet detector based on AlGaN
F. Shahedipour-Sandvik; N. Tripathi; M. Tungare; B. Messer; G. Denbeaux
Materials Research Society Spring Meeting, Boston, MA 10. Exploiting phosphate dependent (2009)
DNA immobilization on HfO2 and AlGaN for integrated biosensors
N. M. Fahrenkopf; S. Oktyabrsky; F. Shahedipour-Sandvik; N. Tokranova; M. Bergkvist; N. C. Cady
Materials Research Society Spring Meeting, Boston, MA (2009)
Polarization Effects on III-nitride Based Tunnel Barriers
N. Tripathi; V. Jindal; L. D. Bell; F. Shahedipour-Sandvik
Materials Research Society Spring Meeting, San Francisco, CA (2009)
Growth Velocity Model for Kinetically Limited III-nitride Faceted Nanostructures
V. Jindal; F. Shahedipour-Sandvik
Materials Research Society Spring Meeting, San Francisco, CA (2009)
AlGaN based III-nitride tunnel barrier hypersepctral detector: effect of internal polarization
N. Tripathi; L. D. Bell; F. Shahedipour-Sandvik
nanoelectronic devices for defense & security conference, Tampa, FL. (2009)
Defect-related photoluminescence in Mg-doped GaN nanostructures
M. A. Reshchikov; F. Shahedipour-Sandvik; B. J. Messer; V. Jindal; N. Tripathi; M. Tungare
25th International Conference on Defects in Semiconductors (2009)
Effect of alloy composition on diversity in crystal shapes of III-Nitride nanostructures grown on different crystallographic planes by MOCVD
V. Jindal; N. Tripathi; M. Tungare F. Shahedipour-Sandvik
Materials Research Society Spring Meeting, San Francisco, CA (2008)
Invited: Novel Substrate Engineering Technique for Development of GaN Based Devices on Si (111)
F. Shahedipour-Sandvik; N. Tripathi; M. Jamil; J. Grandusky; V. Jindal; M. Tungare
Materials Research Society Spring Meeting, San Francisco, CA (2008)
Keynote Speaker: Nanotechnology: Small Science.Big Future
F. Shahedipour-Sandvik
Future City Competition, Hudson Valley Community College, Troy, NY (2008)
Density functional calculations for diffusion path-way and energy barriers determination of precursor adatoms on different crystallographic planes of GaN
V. Jindal; J. R. Grandusky; N. Tripathi; M. Tungare; F. Shahedipour-Sandvik
Materials Research Society Spring Meeting, Boston, MA (2008)
Effect of interfacial strain on shape and composition of MOCVD grown III-Nitride nanostructures
V. Jindal; J. R. Grandusky; N. Tripathi; M. Tungare; F. Shahedipour-Sandvik
Materials Research Society Spring Meeting, Boston, MA (2008)
Density functional calculations of the binding energies and adatom diffusion on strained AlN (0001) and GaN (0001) surface
V. Jindal; J. R. Grandusky; N. Tripathi; M. Tungare; F. Shahedipour-Sandvik
Materials Research Society Fall Meeting, Boston, MA (2007)
Development of homoepitaxially grown GaN thin film layers on freestanding bulk m-plane substrates by metalorganic chemical vapor deposition (MOCVD)
V. Jindal; J. R. Grandusky; M. Tungare; N. Tripathi; F. Shahedipour-Sandvik; P. Sandvik; V. Tilak
Materials Research Society Fall Meeting, Boston, MA (2007)
Selective Area Heteroepitaxy of Low Dimensional a-plane and c-plane InGaN Nanostructures using Pulsed MOCVD
V. Jindal; N. Tripathi; M. Tungare; O. Paschos; P. Haldar; F. Shahedipour-Sandvik
International Conference on Nitride Semiconductors, Las Vegas, NV (2007)
Growth and Characterization of a novel hyperspectral detector using the III-nitrides
N. Tripathi; L. D. Bell; J. R. Grandusky; V. Jindal; F. Shahedipour-Sandvik
International Conference on Nitride Semiconductors, Las Vegas, NV (2007)
Fully Tunable Hyperspectral Imaging Detector based on III-Nitride Dielectric Heterostructures
L. D. Bell; N. Tripathi; J. R. Grandusky; V. Jindal; F. Shahedipour-Sandvik
NANOELECTRONIC DEVICES FOR DEFENSE & SECURITY CONFERENCE, Crystal City, VA (2007)
Critical parameters for growth of optimized GaN and InGaN/GaN MQW structures on freestanding HVPE GaN substrates by MOCVD
J. Grandusky; V. Jindal; N. Tripathi; F. Shahedipour-Sandvik; A. Vertiatchikh; G. Dunne; H. Lu; E. Kaminsky; R. Melkote
American Physical Society March Meeting, Denver, CO (2007)
AlGaN based tunable hyperspectral detector: Growth and device structure optimization
N. Tripathi; J. R. Grandusky; V. Jindal; F. Shahedipour-Sandvik; L. D. Bell
American Physical Society March Meeting, Denver, CO (2007)
Electron pumped multi-wavelength UV emitter array based on AlGaN nanocrystals for bio-florescence application
F. Shahedipour-Sandvik; V. Jindal; J. Grandusky; N. Tripathi; J. Balch; S. LeBoeuf; S. Tandon; T. Tolliver; T. Kreutz
Electronic Materials Conference, TMS, June 26-30, State College, PA (2006)
Nanostructures: Future and Applications in Lighting Industry
V. Jindal; J. Grandusky; M. Jamil; N. Tripathi; F. Shahedipour-Sandvik
New Energy Symposium, Albany, NY (2006)
Development of 405 nm light emitting diodes on bulk GaN substrates for use in solid state lighting
J. R. Grandusky; M. Jamil; V. Jindal; N. Tripathi; F. Shahedipour-Sandvik
New Energy Symposium, Albany, NY (2006)
Development of large area, dislocation reduced III-Nitrides on Si substrate for application in solid state lighting
M. Jamil; N. Tripathi; J. R. Grandusky; V. Jindal; F. Shahedipour-Sandvik
New Energy Symposium, Albany, NY (2006)
Development of large area, dislocation reduced III-Nitrides on engineered AlN/Si substrate
F. Shahedipour-Sandvik; M. Jamil; N. Tripathi; J. R. Grandusky; V. Jindal
Gordon Research Conference, New London, NH (2006)
Mechanism of dislocation reduction in overgrown GaN on engineered AlN/Si substrate and its effect on the optical properties of Violet light emitting diode
M. Jamil; N. Tripathi; J. R. Grandusky; V. Jindal; F. Shahedipour-Sandvik
Materials Research Society Spring Meeting, San Francisco, CA (2006)
Effect of HVPE GaN substrate condition on the characteristics and performance of 405nm LEDs
J. R. Grandusky; M. Jamil; V. Jindal; F. Shahedipour-Sandvik; H. Lu; X. A. Cao; E. B. Kaminsky
Materials Research Society Spring Meeting, San Francisco, CA (2006)
Selective area heteroepitaxy of nano-AlGaN UV excitation sources for bioflourescence application
V. Jindal; J. R. Grandusky; F. Shahedipour-Sandvik; S. F. LeBouef; J. Balch; T. Tolliver
Materials Research Society Spring Meeting, San Francisco, CA (2006)
Development of pit-defect free smooth a-plane GaN surfaces on r-plane sapphire using MOCVD: A growth mechanism study
V. Jindal; J. Grandusky; M. Jamil; E. Irissou; F. Shahedipour-Sandvik; K. Matocha; V. Tilak
International Conference on Nitride Semiconductor, Bremen, Germany (2005)
Compact electron-pumped multiwavelength nanocrystal lasers for advanced biological detection systems
S. F. LeBoeuf; R. Potyrailo; T. Tolliver; A. Vertiatchikh; S. Tandon; R. Chen; F. Shahedipour-Sandvik; J. R. Grandusky; V. Jindal
Dept. of Homeland Security Workshop, College Station, PA (2005)
Effects of GaN template annealing on the optical and morphological quality of the homoepitaxially overgrown GaN layer
J. R. Grandusky; V. Jindal; M. Jamil; F. Shahedipour-Sandvik
Materials Research Society Fall Meeting, Boston, MA (2005)
MOVPE Growth of AlGaN/AlN on Native AlN Substrates for Device Applications
W. Liu; S. Schujman; J. Grandusky; F. Shahedipour-Sandvik; K. Liu; M. Shur; T. Gessmann; Y. Xi; E. F. Schubert L. Schowalter
Materials Research Society Fall Meeting, Boston, MA (2005)
Deep green emission at 570nm from InGaN/GaN MQW active region grown on bulk AlN substrate
F. Shahedipour-Sandvik; J. R. Grandusky; M. Jamil; V. Jindal; S. B. Schujman; L. J. Schowalter; R. Liu; F. A. Ponce; M. Cheung; A. Cartwright
SPIE International Society of Optical Engineering, San Jose, CA (2005)
Development of low dislocation and strain reduced GaN on Si(111) by substrate engineering
M. Jamil; J. R. Grandusky; V. Jindal; F. Shahedipour-Sandvik; S. Guha; M. Arif
SPIE International Society of Optical Engineering, San Jose, CA (2005)
Important interaction effects in the growth of InGaN violet light emitting diodes by MOCVD
J. R. Grandusky; M. Jamil; V. Jindal; J. A. DeLuca; S. F. LeBoeuf; X. A. Cao; S. D. Arthur; F. Shahedipour-Sandvik
SPIE International Society of Optical Engineering, San Jose, CA (2005)
Dislocation reduction and structural properties of GaN layers grown on N+implanted AlN/Si (111) substrates
M. Jamil; J. R. Grandusky; V. Jindal; N. Tripathi; F. Shahedipour-Sandvik
Materials Research Society Fall Meeting, Boston, MA (2005)
Effect of various surface treatments on optical and morphological characteristics of homoepitaxially overgrown GaN layers and device structures
F. Shahedipour-Sandvik; V. Jindal; J. Grandusky; M. Jamil
American Physical Society March Meeting, Los Angeles, CA (2005)
Defect engineering in Si substrate for strain reduction at GaN/Si interface
M. Jamil; J. Grandusky; F. Shahedipour-Sandvik
American Physical Society March Meeting, Los Angeles, CA (2005)
Effect of GaN Surface Treatment on the Morphological and Optoelectronic properties of Violet Light Emitting Diodes
M. Jamil; J. R. Grandusky; F. Shahedipour-Sandvik
Materials Research Society Fall Meeting, Boston, MA (2004)
Sub-micron Selective Area Growth of GaN Islands on GaN, AlN and Sapphire Substrates
F. Shahedipour-Sandvik; J. Grandusky; C. Keimel; A. Alizadeh; S. Ganti; S. T. Taylor; S. F. LeBoeuf
Materials Research Society Fall Meeting, Boston, MA (2004)
Improved structural and electrical properties in GaN epilayers by employing a delayed coalescence method in the low temperature GaN buffer layer growth
F. Shahedipour-Sandvik; M. Jamil; J. Grandusky
American Physical Society March Meeting, Montreal, Canada (2004)
Templated growth of wideband gap nanostructures
A. Alizadeh; S. Ganti; P. Shrama; S. LeBoeuf; F. Shahedipour-Sandvik
American Physical Society March Meeting, Montreal, Canada (2004)
Observation of ring-defects in high In content InGaN/GaN MQW
F. Shahedipour-Sandvik; M. Jamil; J. Grandusky; D. Wu; J. Ramer; V. Merai
American Physical Society March Meeting, Montreal, Canada (2004)
Effect of small sapphire substrate misorientation on the properties of GaN-based green LED structures
F. Shahedipour-Sandvik; M. Jamil; J. Grandusky; S. Guha; D. I. Florescu; D. S. Lee; D. Lu; A. Parekh; V. Merai; J. C. Ramer; E. Armour
8th Wide bandgap III-nitride workshop, Richmond, VA (2003)
Structural Studies of Diluted Magnetic Semiconducting GaN: Mn films
F. Shahedipour-Sandvik; J. Grandusky; D. Wu; V. LaBella; M. Huang
American Physical Society March Meeting, Austin, TX (2003)
Progress in the Fabrication of GaN Photo-Cathodes
M. P. Ulmer; B. W. Wessels; F. Shahedipour; C. Joseph; T. Nihashi
Hubble Science Workshop (2002)
Influence of defects on electrical and optical characteristics of GaN/InGaN-based light-emitting diodes
X. A. Cao; K. Topol; F. Shahedipour-Sandvik; J. Teetsov; P. M. Sandvik; S. E. LeBoeuf; A. Ebong; J. W. Kretchmer; E. B. Stokes; S. Arthur; A. E. Kaloyeros; D. Walker
SPIE International Society of Optical Engineering, Seattle, WA (2002)
Development of AlGaN for UV LEDs and Lasers (?~280 nm)
F. Shahedipour; M. Razeghi
Microsystems Technology Office of the Defense Advanced Research Projects Agency , Workshop on, III-Nitride UV emitters study group conference, Arlington, VA (2001)
AlxGa1-xN materials and device technology for solar blind ultraviolet photodetector applications
R. McClintock; P. M. Sandvik; K. Mi; F. Shahedipour; A. Yasan; C. L. Jelen; P. Kung; M. Razeghi
SPIE International Society of Optical Engineering, San Jose, CA (2001)
Progress in the fabrication of GaN photocathodes
M. P. Ulmer; B. W. Wessels; F. Shahedipour; R. Y. Korotokov; C. L. Joseph; T. Nihashi
SPIE International Society of Optical Engineering, San Jose, CA (2001)
Evidence for deep donor participation in the blue luminescence observed in GaN: Mg,
U. Venkateswaran; S. Ves; I. Loa; K. Syassen; F. Shahedipour; B. W. Wessels
American Physical Society March Meeting, Minneapolis, MN (2000)
Comparative optical studies of p-type and undoped GaN
S. Guha; F. Shahedipour; B. W. Wessels
American Physical Society March Meeting, Minneapolis, MN (2000)
Solar-blind AlxGa1-xN p-i-n photodetectors grown on LEO and non-LEO GaN
P. M. Sandvik; D. Walker; P. Kung; K. Mi; F. Shahedipour; V. Kumar; X. Zhang; J. E. Diaz; C. L. Jelen; M. Razeghi
SPIE International Society of Optical Engineering, San Jose, CA (2000)
Micro-Crystalline Diamond Synthesis under a Broad Range of Methane Concentrations In Hydrogen Plasma
F. Shahedipour; S. Zhu; H. W. White
American Physical Society March Meeting, Atlanta, GA (1999)
Photoluminescence Spectroscopy of the 2.9 eV Band in Undoped GaN Epitaxial Layers
M. Reshchikov; F. Shahedipour; R. Korotkov; M. P. Ulmer; B. W. Wessels
American Physical Society March Meeting, Atlanta, GA (1999)
UV Sensors & Solar Blind UV Detector
M. Razeghi; P. Kung; F. Shahedipour; K. Mi; X. Zhang; V. Kumar
6th International Conference on Nitride Semiconductor, Arlington, VA (1999)
Investigation of formation of 2.9 eV luminescence band in p-type GaN
F. Shahedipour; B. W. Wessels
Electronic Material Conference, TMS, Santa Barbara, CA (1999)
Substrate Surface Roughness as a Determinant Factor in Diamond Deposition on Steel Substrate
F. Shahedipour; H. W. White
American Physical Society March Meeting, Los Angeles, CA (1998)
In situ process diagnostics and intelligent materials processing on sapphire substrates in a diamond ECR-PECVD system
F. Shahedipour; B. P. Conner; H. W. White
Materials Research Society, MD (1997)
Low Pressure- Low Temperature Diamond Growth on Steel Substrate Using a Magneto- Active Plasma Chemical Vapor Deposition
F. Shahedipour; S. Zhu; H. W. White
American Physical Society March Meeting, Kansas City, MO (1997)
