Integrated Non-Planer FinFET

  • SOI Starting Substrate
  • 20nm Fin Width
    • 15nm Fins achievable with smoothing
  • High-k / MG - Ideal test vehicle for evaluating new gate materials on non planar devices
  • 40nm a-Si Gates
  • Nitride Spacer
  • Nickel Silicide
  • Cu Pad Contacts
  • Testable Structures @ M1 and PSP
  • Slot and Pad Contacts

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