Capability description

• Device design using 2D TCAD Sentaurus:
  • Wide bandgap materials (4H-SiC, GaN)
  • Simulation of electrostatic, thermal, optical excitation effects
  • Experience with diverse architectures (Diodes, MOSFET, JFET, SBD, HEMT)
  • Static and dynamic simulation
• Design for manufacturing to enable outsourcing of device fabrication
• Pairing TCAD with Monte-Carlo to enable multiphysics simulation

Image of simulated 4H-SiC MOSFETs structure