Device design - TCAD Sentaurus

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Capability description

  • Device design using 2D TCAD Sentaurus:
    • Wide bandgap materials (4H-SiC, GaN)
    • Simulation of electrostatic, thermal, optical excitation effects
    • Experience with diverse architectures (Diodes, MOSFET, JFET, SBD, HEMT)
    • Static and dynamic simulation
  • Design for manufacturing to enable outsourcing of device fabrication
  • Pairing TCAD with Monte-Carlo to enable multiphysics simulation
Image of simulated 4H-SiC MOSFETs structure
Image of simulated 4H-SiC MOSFETs structure

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