In situ Thickness and Stress Monitoring

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MOCVD equipped with k-space in situ stress evolution/growth monitoring system

Thickness Monitoring

  • Reflectance measured during growth
  • Changes in reflectance used to determine material thickness and growth rate

Stress Monitoring

  • Curvature of wafer measured using laser array
  • Stress calculated using Stoney Equation to monitor real-time stress evolution during growth
Schematic of laser array used to measure wafer bowing k-space ICE tool mounted on D180 Wafer curvature/stress evolution during the growth of GaN on Si(111)
Schematic of laser array used to measure wafer bowing k-space ICE tool mounted on D180 Wafer curvature/stress evolution during the growth of GaN on Si(111)

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